RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2701JE, RN2702JE, RN2703JE RN2704JE, RN2705JE, RN2706JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Complementary to RN1701JE to RN1706JE Equivalent Circuit and Bias Resistor Values C Type No. R1 (k ) R2 (k ) 1.BASE1 (B1) 2.EMITTER (E) RN2701JE 4.7 4.7 3.BASE2 (B2) R1 4.COLLECTOR2 (C2) B RN2702JE 10 10 5.COLLECTOR1 (C1) RN2703JE 22 22 RN2704JE 47 47 JEDEC E RN2705JE 2.2 47 JEITA RN2706JE 4.7 47 TOSHIBA 2-2P1D Weight: 0.003 g (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Equivalent Circuit (top view) Characteristics Symbol Rating Unit 54 Collector-base voltage V 50 V CBO RN2701JE to 2706JE Collector-emitter voltage V 50 V CEO Q1 Q2 RN2701JE 10 to 2704JE Emitter-base voltage V V EBO RN2705JE 5 RN2706JE 12 3 Collector current I 100 mA C Collector power dissipation P (Note 1) 100 mW C RN2701JE to 2706JE Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Start of commercial production 2000-06 1 2014-03-01 R2 RN2701JE~RN2706JE Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. MaxUnit I V = 50 V, I = 0 100 CBO CB E Collector cut-off current RN2701JE to 2706JE nA I V = 50 V, I = 0 500 CEO CE B RN2701JE 0.82 1.52 RN2702JE 0.38 0.71 V = 10 V, I = 0 EB C RN2703JE 0.17 0.33 Emitter cut-off current I mA EBO RN2704JE 0.082 0.15 RN2705JE 0.078 0.145 V = 5 V, I = 0 EB C RN2706JE 0.074 0.138 RN2701JE 30 RN2702JE 50 RN2703JE 70 V = 5 V, CE DC current gain h FE I = 10 mA C RN2704JE 80 RN2705JE 80 RN2706JE 80 Collector-emitter I = 5 mA, C RN2701JE to 2706JE V 0.1 0.3 V CE (sat) saturation voltage I = 0.25 mA B RN2701JE 1.1 2.0 RN2702JE 1.2 2.4 RN2703JE 1.3 3.0 V = 0.2 V, CE Input voltage (ON) V V I (ON) I = 5 mA C RN2704JE 1.5 5.0 RN2705JE 0.6 1.1 RN2706JE 0.7 1.3 RN2701JE to 2704JE 1.0 1.5 V = 5 V, CE Input voltage (OFF) V V I (OFF) I = 0.1 mA C RN2705JE, 2706JE 0.5 0.8 V = 10 V, CE Transition frequency RN2701JE to 2706JE f 200 MHz T I = 5 mA C Collector output V = 10 V, I = 0, CB E RN2701JE to 2706JE C 3 6 pF ob capacitance f = 1 MHz RN2701JE 3.29 4.7 6.11 RN2702JE 7 10 13 RN2703JE 15.4 22 28.6 Input resistor R1 k RN2704JE 32.9 47 61.1 RN2705JE 1.54 2.2 2.86 RN2706JE 3.29 4.7 6.11 RN2701JE to 2704JE 0.9 1.0 1.1 Resistor ratio RN2705JE R1/R2 0.0421 0.0468 0.0515 RN2706JE 0.09 0.1 0.11 2 2014-03-01