RN2708,LF Toshiba

RN2707 to RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2707, RN2708, RN2709 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1707 to RN1709 Equivalent Circuit and Bias Resistor Values USV JEDEC JEITA TOSHIBA 2-2L1A Weight: 6.2 mg (typ.) Part No. R1 (k ) R2 (k ) RN2707 10 47 RN2708 22 47 RN2709 47 22 Start of commercial production 1998-02 1 2019 2019-10-29 Toshiba Electronic Devices & Storage Corporation RN2707 to RN2709 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO RN2707 to 2709 Collector-emitter voltage V 50 V CEO RN2707 6 Emitter-base voltage RN2708 V 7 V EBO RN2709 15 Collector current I 100 mA C Collector power dissipation P * 200 mW C RN2707 to 2709 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating Equivalent Circuit (top view) 2 2019 2019-10-29 Toshiba Electronic Devices & Storage Corporation