RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2710, RN2711 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1710 and RN1711 Equivalent Circuit USV JEDEC JEITA TOSHIBA 2-2L1A Weight: 6.2 mg (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C Collector power dissipation P * 200 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Total rating Start of commercial production 1992-01 1 2019 2019-10-30 Toshiba Electronic Devices & Storage Corporation RN2710,RN2711 Equivalent Circuit (Top View) Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current I V = 50 V, I = 0 mA 100 nA CBO CB E Emitter cut-off current I V = 5 V, I = 0 mA 100 nA EBO EB C DC current gain h V = 5 V, I = 1 mA 120 400 FE CE C Collector-emitter saturation voltage V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B Transition frequency f V = 10 V, I = 5 mA 200 MHz T CE C Collector output capacitance C V = 10 V, I = 0 mA, f = 1 MHz 3 6 pF ob CB E RN2710 3.29 4.7 6.11 Input resistor R1 k RN2711 7 10 13 2 2019 2019-10-30 Toshiba Electronic Devices & Storage Corporation