RN2714 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2714 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Two devices incorporated in a USV (5-pin ultra-super-mini-type) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit C R1 B USV R1: 1.0 k (Q1, Q2 common) JEDEC R2: 10 k (Q1, Q2 common) E JEITA TOSHIBA 2-2L1A Weight: 6.2 mg (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Characteristic Symbol Rating Unit Collector-base voltage V -50 V CBO Collector-emitter voltage V -50 V CEO Emitter-base voltage V -5 V EBO Collector current I -100 mA C Collector power dissipation P (Note 1) 200 mW C Junction temperature T 150 C j Storage temperature range T -55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Start of commercial production 2000-02 1 2019 2019-10-30 Toshiba Electronic Devices & Storage Corporation R2 RN2714 Equivalent Circuit (top view) 5 4 Q1 Q2 1 2 3 Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristic Symbol Test Condition Min Typ. Max Unit I V = -50 V, I = 0 A -100 CBO CB E Collector cutoff current nA I V = -50 V, I = 0 A -500 CEO CE B Emitter cutoff current I V = -5 V, I = 0 A -0.35 -0.65 mA EBO EB C DC current gain h V = -5 V, I = -10 mA 50 FE CE C Collector-emitter saturation voltage V I = -5 mA, I = -0.25 mA -0.1 -0.3 V CE (sat) C B Input voltage (ON) V V = -0.2 V, I = -5 mA -0.5 -2.0 V I (ON) CE C Input voltage (OFF) V V = -5 V, I = -0.1 mA -0.3 -0.9 V I (OFF) CE C Input resistance R1 0.7 1.0 1.3 k Resistance ratio R1/R2 0.1 Marking YQ 2 2019 2019-10-30 Toshiba Electronic Devices & Storage Corporation