RN2901,LF(CT Toshiba

RN2901 to RN2906 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2901, RN2902, RN2903 RN2904, RN2905, RN2906 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit AEC-Q101 Qualified (Note1) Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1901 to RN1906 Note1: For detail information, please contact to our sales. Equivalent Circuit and Bias Resistor Values Part No. R1 (k ) R2 (k ) RN2901 4.7 4.7 US6 RN2902 10 10 JEDEC RN2903 22 22 JEITA RN2904 47 47 2-2J1A TOSHIBA RN2905 2.2 47 Weight: 6.8 mg (typ.) RN2906 4.7 47 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Equivalent Circuit (Top View) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN2901 to 2906 Collector-emitter voltage V 50 V CEO RN2901 to 2904 10 Emitter-base voltage V V EBO RN2905, 2906 5 Collector current I 100 mA C Collector power dissipation PC * 200 mW RN2901 to 2906 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating Start of commercial production 1990-12 2019 2019-11-15 1 Toshiba Electronic Devices & Storage Corporation RN2901 to RN2906 Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ. Max Unit I V = 50 V, I = 0 mA 100 CBO CB E Collector cut-off current RN2901 to 2906 nA I V = 50 V, I = 0 mA 500 CEO CE B RN2901 0.82 1.52 RN2902 0.38 0.71 V = 10 V, I = 0 mA EB C RN2903 0.17 0.33 Emitter cut-off current I mA EBO RN2904 0.082 0.15 RN2905 0.078 0.145 V = 5 V, I = 0 mA EB C RN2906 0.074 0.138 RN2901 30 RN2902 50 RN2903 70 V = 5 V CE DC current gain h FE I = 10 mA C RN2904 80 RN2905 80 RN2906 80 Collector-emitter I = 5 mA C RN2901 to 2906 V 0.1 0.3 V CE (sat) saturation voltage I = 0.25 mA B RN2901 1.1 2.0 RN2902 1.2 2.4 RN2903 1.3 3.0 V = 0.2 V CE Input voltage (ON) V V I (ON) I = 5 mA C RN2904 1.5 5.0 RN2905 0.6 1.1 RN2906 0.7 1.3 RN2901 to 2904 1.0 1.5 V = 5 V, CE Input voltage (OFF) V V I (OFF) I = 0.1 mA C RN2905, 2906 0.5 0.8 V = 10 V, CE Transition frequency RN2901 to 2906 f 200 MHz T I = 5 mA C Collector output VCB = 10 V, IE = 0 mA RN2901 to 2906 C 3 6 pF ob capacitance f = 1 MHz RN2901 3.29 4.7 6.11 RN2902 7 10 13 RN2903 15.4 22 28.6 Input resistor R1 k RN2904 32.9 47 61.1 RN2905 1.54 2.2 2.86 RN2906 3.29 4.7 6.11 RN2901 to 2904 0.9 1.0 1.1 Resistor ratio RN2905 R1/R2 0.0421 0.0468 0.0515 RN2906 0.09 0.1 0.11 2019 2019-11-15 2 Toshiba Electronic Devices & Storage Corporation