RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2901FE, RN2902FE, RN2903FE RN2904FE, RN2905FE, RN2906FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Complementary to RN1901FE to RN1906FE Equivalent Circuit and Bias Resistor Values C Type No. R1 (k ) R2 (k ) RN2901FE 4.7 4.7 R1 RN2902FE 10 10 B RN2903FE 22 22 JEDEC RN2904FE 47 47 E JEITA RN2905FE 2.2 47 RN2906FE 4.7 47 TOSHIBA 2-2N1G Weight:0.003 g (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Equivalent Circuit (top view) Characteristics Symbol Rating Unit 6 5 4 Collector-base voltage V 50 V CBO RN2901FE to 2906FE Collector-emitter voltage V 50 V CEO RN2901FE Q2 10 Q1 to 2904FE Emitter-base voltage V V EBO RN2905FE 5 RN2906FE 1 2 3 Collector current I 100 mA C Collector power dissipation P (Note 1) 100 mW C RN2901FE to 2906FE Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Start of commercial production 2000-05 1 2014-03-01 R2 RN2901FE~RN2906FE Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. MaxUnit I V = 50 V, I = 0 100 CBO CB E Collector cut-off current RN2901FE to 2906FE nA I V = 50 V, I = 0 500 CEO CE B RN2901FE 0.82 1.52 RN2902FE 0.38 0.71 V = 10 V, I = 0 EB C RN2903FE 0.17 0.33 Emitter cut-off current I mA EBO RN2904FE 0.082 0.15 RN2905FE 0.078 0.145 V = 5 V, I = 0 EB C RN2906FE 0.074 0.138 RN2901FE 30 RN2902FE 50 RN2903FE 70 V = 5 V, CE DC current gain h FE I = 10 mA C RN2904FE 80 RN2905FE 80 RN2906FE 80 Collector-emitter I = 5 mA, C RN2901FE to 2906FE V 0.1 0.3 V CE (sat) saturation voltage I = 0.25 mA B RN2901FE 1.1 2.0 RN2902FE 1.2 2.4 RN2903FE 1.3 3.0 V = 0.2 V, CE Input voltage (ON) V V I (ON) I = 5 mA C RN2904FE 1.5 5.0 RN2905FE 0.6 1.1 RN2906FE 0.7 1.3 RN2901FE to 2904FE 1.0 1.5 V = 5 V, CE Input voltage (OFF) V V I (OFF) I = 0.1 mA C RN2905FE, RN2906FE 0.5 0.8 V = 10 V, CE Transition frequency RN2901FE to 2906FE f 200 MHz T I = 5 mA C Collector output V = 10 V, I = 0, CB E RN2901FE to 2906FE C 3 6 pF ob capacitance f = 1 MHz RN2901FE 3.29 4.7 6.11 RN2902FE 7 10 13 RN2903FE 15.4 22 28.6 Input resistor R1 k RN2904FE 32.9 47 61.1 RN2905FE 1.54 2.2 2.86 RN2906FE 3.29 4.7 6.11 RN2901FE to 2904FE 0.9 1.0 1.1 Resistor ratio RN2905FE R1/R2 0.0421 0.0468 0.0515 RN2906FE 0.09 0.1 0.11 2 2014-03-01