RN2907FE~RN2909FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2907FE, RN2908FE, RN2909FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Complementary to RN1907FE to RN1909FE Equivalent Circuit and Bias Resistor Values C Type No. R1 (k) R2 (k) RN2907FE 10 47 R1 B RN2908FE 22 47 RN2909FE 47 22 JEDEC E JEITA TOSHIBA 2-2N1G Weight: 0.003 g (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Equivalent Circuit Characteristics Symbol Rating Unit (top view) Collector-base voltage V 50 V CBO 6 5 4 RN2907FE to 2909FE Collector-emitter voltage V 50 V CEO RN2907FE 6 Q2 Q1 Emitter-base voltage V V RN2908FE 7 EBO RN2909FE 15 Collector current I 100 mA C 1 2 3 Collector power dissipation P (Note 1) 100 mW C RN2907FE to 2909FE Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Start of commercial production 2000-05 1 2014-03-01 R2 RN2907FE~RN2909FE Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. MaxUnit I V = 50 V, I = 0 100 CBO CB E Collector cut-off current RN2907FE to 2909FE nA I V = 50 V, I = 0 500 CEO CE B RN2907FE V = 6 V, I = 0 0.081 0.15 EB C Emitter cut-off current I mA RN2908FE V = 7 V, I = 0 0.078 0.145 EBO EB C RN2909FE V = 15 V, I = 0 0.167 0.311 EB C RN2907FE 80 V = 5 V, CE DC current gain RN2908FE 80 h FE I = 10 mA C RN2909FE 70 Collector-emitter I = 5 mA, C RN2907FE to 2909FE V 0.1 0.3 V CE (sat) saturation voltage I = 0.25 mA B RN2907FE 0.7 1.8 V = 0.2 V, CE Input voltage (ON) RN2908FE V 1.0 2.6 V I (ON) I = 5 mA C RN2909FE 2.2 5.8 RN2907FE 0.5 1.0 V = 5 V, CE Input voltage (OFF) RN2908FE V 0.6 1.16 V I (OFF) I = 0.1 mA C RN2909FE 1.5 2.6 V = 10 V, CE Transition frequency RN2907FE to 2909FE f 200 MHz T I = 5 mA C Collector output V = 10 V, I = 0, CB E RN2907FE to 2909FE C 3 6 pF ob capacitance f = 1 MHz RN2907FE 7 10 13 Input resistor RN2908FE 15.4 R1 22 28.6 k RN2909FE 32.9 47 61.1 RN2907FE 0.191 0.213 0.232 Resistor ratio RN2908FE R1/R2 0.421 0.468 0.515 RN2909FE 1.92 2.14 2.35 2 2014-03-01