RN2909,LF(CT Toshiba

RN2907 to RN2909 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2907, RN2908, RN2909 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm AEC-Q101 Qualified (Note1) Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1907 to RN1909 Note1: For detail information, please contact to our sales. Equivalent Circuit and Bias Resistor Values US6 Part No. R1 (k ) R2 (k ) JEITA TOSHIBA 2-2J1A RN2907 10 47 Weight: 6.8 mg (typ.) RN2908 22 47 RN2909 47 22 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Equivalent Circuit (Top View) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN2907 to 2909 Collector-emitter voltage V 50 V CEO RN2907 6 Emitter-base voltage RN2908 V 7 V EBO RN2909 15 Collector current I 100 mA C Collector power dissipation P * 200 mW C RN2907 to 2909 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Total rating Start of commercial production 1990-12 2019 2019-11-15 1 Toshiba Electronic Devices & Storage Corporation RN2907 to RN2909 Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ. Max Unit I V = 50 V, I = 0 mA 100 nA CBO CB E Collector cut-off RN2907 to 2909 current I V = 50 V, I = 0 mA 500 nA CEO CE B RN2907 VEB = 6 V, IC = 0 mA 0.081 0.15 Emitter cut-off RN2908 I V = 7 V, I = 0 mA 0.078 0.145 mA EBO EB C current RN2909 V = 15 V, I = 0 mA 0.167 0.311 EB C RN2907 80 DC current gain RN2908 hFE VCE = 5 V, IC = 10 mA 80 RN2909 70 Collector-emitter RN2907 to 2909 VCE (sat) IC = 5 mA, IB = 0.25 mA 0.1 0.3 V saturation voltage RN2907 0.7 1.8 Input voltage (ON) RN2908 VI (ON) VCE = 0.2 V, IC = 5 mA 1.0 2.6 V RN2909 2.2 5.8 RN2907 0.5 1.0 Input voltage (OFF) RN2908 V V = 5 V, I = 0.1 mA 0.6 1.16 V I (OFF) CE C RN2909 1.5 2.6 Translation RN2907 to 2909 f V = 10 V, I = 5mA 200 MHz T CE C frequency Collector output V = 10 V, I = 0 mA, CB E RN2907 to 2909 Cob 3 6 pF capacitance f = 1 MHz RN2907 7 10 13 Input resistor RN2908 R1 15.4 22 28.6 k RN2909 32.9 47 61.1 RN2907 0.191 0.213 0.232 Resistor ratio RN2908 R1/R2 0.421 0.468 0.515 RN2909 1.92 2.14 2.35 2019 2019-11-15 2 Toshiba Electronic Devices & Storage Corporation