RN2961 to RN2966 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2961, RN2962, RN2963 RN2964, RN2965, RN2966 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1961 to RN1966 Equivalent Circuit and Bias Resistor Values Part No. R1 (k ) R2 (k ) RN2961 4.7 4.7 RN2962 10 10 RN2963 22 22 US6 RN2964 47 47 JEDEC JEITA RN2965 2.2 47 TOSHIBA 2-2J1B RN2966 4.7 47 Weight: 6.8mg (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Equivalent Circuit (Top View) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN2961 to 2966 Collector-emitter voltage V 50 V CEO RN2961 to 2964 10 Emitter-base voltage V V EBO RN2965, 2966 5 Collector current I 100 mA C Collector power dissipation P 200 mW C * RN2961 to 2966 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating Start of commercial production 1998-02 2019 2019-11-18 1 Toshiba Electronic Devices & Storage Corporation RN2961 to RN2966 Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ. Max Unit I V = 50 V, I = 0 mA 100 CBO CB E Collector cut-off current RN2961 to 2966 nA I V = 50 V, I = 0 mA 500 CEO CE B RN2961 0.82 1.52 RN2962 0.38 0.71 V = 10 V, I = 0 mA EB C RN2963 0.17 0.33 Emitter cut-off current I mA EBO RN2964 0.082 0.15 RN2965 0.078 0.145 V = 5 V, I = 0 mA EB C RN2966 0.074 0.138 RN2961 30 RN2962 50 RN2963 70 DC current gain h V = 5 V, I = 10 mA FE CE C RN2964 80 RN2965 80 RN2966 80 Collector-emitter RN2961 to 2966 V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B saturation voltage RN2961 1.1 2.0 RN2962 1.2 2.4 RN2963 1.3 3.0 Input voltage (ON) V V = 0.2 V, I = 5 mA V I (ON) CE C RN2964 1.5 5.0 RN2965 0.6 1.1 RN2966 0.7 1.3 RN2961 to 2964 1.0 1.5 Input voltage (OFF) V V = 5 V, I = 0.1 mA V I (OFF) CE C RN2965, 2966 0.5 0.8 Transition frequency RN2961 to 2966 f V = 10 V, I = 5 mA 200 MHz T CE C Collector output = 10 V, I = 0 mA VCB E RN2961 to 2966 C 3 6 pF ob capacitance f = 1 MHz RN2961 3.29 4.7 6.11 RN2962 7 10 13 RN2963 15.4 22 28.6 Input resistor R1 k RN2964 32.9 47 61.1 RN2965 1.54 2.2 2.86 RN2966 3.29 4.7 6.11 RN2961 to 2964 0.9 1.0 1.1 Resistor ratio RN2965 R1/R2 0.0421 0.0468 0.0515 RN2966 0.09 0.1 0.11 2019 2019-11-18 2 Toshiba Electronic Devices & Storage Corporation