RN4907 TOSHIBA Transistor Silicon PNP/NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4907 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications z Including two devices in US6 (ultra super mini type with 6 leads) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process Equivalent Circuit and Bias Resister Values R1: 10k R2: 47k (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25C) JEDEC JEITA Characteristic Symbol Rating Unit TOSHIBA 2-2J1A Weight: 6.8mg (typ.) Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 6 V EBO Collector current I 100 mA C Q2 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 6 V EBO Collector current I 100 mA C Start of commercial production 1990-10 1 2014-03-01 RN4907 Q1, Q2 Common Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector power dissipation P * 200 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating Marking Equivalent Circuit (Top View) Q1 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit I V = 50V, I = 0 100 CBO CB E Collector cut-off current nA I V = 50V, I = 0 500 CEO CE B Emitter cut-off current I V = 6V, I = 0 0.081 0.15 mA EBO EB C DC current gain h V = 5V, I = 10mA 80 FE CE C Collector-emitter saturation voltage V I = 5mA, I = 0.25mA 0.1 0.3 V CE (sat) C B Input voltage (ON) V V = 0.2V, I = 5mA 0.7 1.8 V I (ON) CE C Input voltage (OFF) V V = 5V, I = 0.1mA 0.5 1.0 V I (OFF) CE C f V = 10V, I = 5mA Transition frequency 200 MHz T CE C Collector output capacitance C V = 10V, I = 0, f = 1MHz 3 6 pF ob CB E 2 2014-03-01