RN4988FE,LF(CT Toshiba

RN4988FE TOSHIBA Transistor Silicon NPN PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4988FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 C C R1 R1 B B JEDEC E E JEITA TOSHIBA 2-2N1G R1: 22 k Weight: 0.003 g (typ.) R2: 47 k (Q1, Q2 common) Marking Equivalent Circuit (top view) 6 54 6 I Q2 Q1 123 Start of commercial production 2000-05 1 2014-03-01 R2 R2 RN4988FE Absolute Maximum Ratings (Ta = 25C) (Q1) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 7 V EBO Collector current I 100 mA C Absolute Maximum Ratings (Ta = 25C) (Q2) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 7 V EBO Collector current I 100 mA C Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Rating Unit Collector power dissipation P (Note 1) 100 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating 2 2014-03-01