SSM3J133TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J133TU Power Management Switch Applications Unit: mm 1.5V drive 2.10.1 Low ON-resistance: R = 88.4 m (max) ( V = -1.5 V) DS(ON) GS R = 56.0 m (max) ( V = -1.8 V) 1.70.1 DS(ON) GS R = 39.7 m (max) ( V = -2.5 V) DS(ON) GS R = 29.8 m (max) ( V = -4.5 V) DS(ON) GS 1 3 2 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit V V Drain-source voltage -20 DSS V V Gate-source voltage 8 GSS DC I (Note1) -5.5 D Drain current A Pulse I (Note1) -11.0 DP P (Note2) 500 D power dissipation mW 1: Gate t<1s 1000 2: Source UFM T C Channel temperature 150 ch 3: Drain T C Storage temperature range 55 to 150 stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2U1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the weight: 6.6 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: The channel temperature should not exceed 150C during use. Note2: Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (Top view) 3 3 JJL 1 2 1 2 Start of commercial production 2011-02 1 2014-03-01 2.00.1 0.650.05 0.70.05 0.1660.05 +0.1 0.3 -0.05SSM3J133TU Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 V (BR) DSS D GS Drain-source breakdown voltage V I = -1 mA, V = 5 V . (Note 4) -15 V (BR) DSX D GS Drain cut-off current I V = -20 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -1.0 A (Note 3) 5.2 10.4 S fs DS D I = -3.0 A, V = -4.5 V (Note 3) 24.9 29.8 D GS I = -2.5 A, V = -2.5 V (Note 3) 31.1 39.7 D GS Drain-source ON-resistance R m DS (ON) I = -1.5 A, V = -1.8 V (Note 3) 38.8 56.0 D GS I = -0.5 A, V = -1.5 V (Note 3) 47.4 88.4 D GS Input capacitance C 840 iss V = -10 V, V = 0 V DS GS pF Output capacitance C 118 oss f = 1 MHz Reverse transfer capacitance C 99 rss Turn-on time t V = -10 V, I = -2.0 A 32 on DD D Switching time ns V = 0 to -2.5 V, R = 4.7 Turn-off time t 107 GS G off Total gate charge Q 12.8 g V = -10 V, I = -4.0 A, DD D nC Gate-source charge Q 1.4 gs1 V = -4.5 V GS Gate-drain charge Q 3.0 gd Drain-Source forward voltage V I = 5.5A, V = 0 V (Note3) 0.83 1.2 V DSF D GS Note 3: Pulse test Note 4: If a forward bias is applied between gate and source, this device enters V mode. Note that the (BR)DSX drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit (b) V IN 0 V 90% OUT 0 IN 10% 2.5 V 2.5V R L V DS (ON) (c) V OUT 90% 10 s V DD V = -10 V DD 10% R = 4.7 G V DD t t r f Duty 1% V : t , t < 5 ns IN r f t t on off Common source Ta = 25C Notice on Usage Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (-1 mA for the th D SSM3J133TU). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V . th. GS(off) th GS(on) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and power dissipation P vary depending on board material, board area, board thickness th (ch-a) D and pad area. When using this device, please take heat dissipation into consideration. 2 2014-03-01 R G