TBD62786APG Toshiba

TBD62786APG/FNG/FWG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TBD62786APG, TBD62786AFNG, TBD62786AFWG 8-ch low active source type DMOS transistor array TBD62786A series are DMOS transistor arrays with 8 circuits. Each output TBD62786APG has an internal clamp diode that clamps the back electromotivce e for generated in driving inductive loa. dsPlease be careful about thermal conditions during use. Features 8 circuits built-in High output voltage : V = 50 V (max) OUT P-DIP18-300-2.54-001 Large output current : I = -500 mA (max, per 1 ch) OUT Input voltage (output on) : -30 to -2.8 V Input voltage (output off) : -1.2 to 0 V TBD62786AFNG Package : PG type P-DIP18-300-2.54-001 FNG typ e SSOP18-P-225-0.65 FWG type P-SOP18-0812-1.27-001 TBD62786AFWG Pin connection (top view) O1 O2 O3 O4 O5 O6 O7 O8 GND P-SOP18-0812-1.27-001 Weight P-DIP18-300-2.54-001 : 1.3 g (typ.) I1 I2 I3 I4 I5 I6 I7 I8 VCC SSOP18-P-225-0.65 : 0. 09 g (typ.) P-SOP18-0812-1.27-001 : 0.48 g (typ.) Pin Connection may be omitted partially or simplified for explanatory purposes. 2017 2017-07-05 1 Toshiba Electronic Devices & Storage Corporation TBD62786APG/FNG/FWG Pin description Pin No. Pin name Function 1 I1 Input pin Input pin 2 I2 3 I3 Input pin 4 I4 Input pin Input pin 5 I5 Input pin 6 I6 7 I7 Input pin 8 I8 Input pin 9 VCC Power supply pin 10 GND GND pin 11 O8 Output pin 12 O7 Output pin Output pin 13 O6 Output pin 14 O5 15 O4 Output pin 16 O3 Output pin Output pin 17 O2 Output pin 18 O1 Basic circuit VCC Clamp circuit INPUT OUTPUT Clamp diode Basic circuit may be omitted partially or simplified for explanatory purpose. 2017-07-05 2