TC74HC10AF Toshiba

TC74HC10AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC10AP, TC74HC10AF Triple 3-Input NAND Gate The TC74HC10A is a high speed CMOS 3-INPUT NAND 2 TC74HC10AP GATE fabricated with silicon gate C MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Features TC74HC10AF High speed: t = 6 ns (typ.) at V = 5 V pd CC Low power dissipation: I = 1 A (max) at Ta = 25C CC High noise immunity: V = V = 28% V (min) NIH NIL CC Output drive capability: 10 LSTTL loads Symmetrical output impedance: I = I = 4 mA (min) OH OL Balanced propagation delays: t t pLH pHL Wide operating voltage range: V (opr) = 2 to 6 V CC Pin and function compatible with 74LS10 Weight Pin Assignment DIP14-P-300-2.54 : 0.96 g (typ.) SOP14-P-300-1.27A : 0.18 g (typ.) IEC Logic Symbol Start of commercial production 1986-05 1 2014-03-01 TC74HC10AP/AF Truth Table A B C Y L X X H X L X H X X L H H H H L X: Dont care Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range V 0.5 to 7 V CC DC input voltage V 0.5 to V + 0.5 V IN CC DC output voltage V 0.5 to V + 0.5 V OUT CC Input diode current I 20 mA IK Output diode current I 20 mA OK DC output current I 25 mA OUT DC V /ground current I 50 mA CC CC Power dissipation P 500 (DIP) (Note 2)/180 (SOP) mW D Storage temperature T 65 to 150 C stg Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = 40 to 65C. From Ta = 65 to 85C a derating factor of 10 mW/C shall be applied until 300 mW. Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage V 2 to 6 V CC Input voltage V 0 to V V IN CC Output voltage V 0 to V V OUT CC Operating temperature T 40 to 85 C opr 0 to 1000 (V = 2.0 V) CC Input rise and fall time t , t 0 to 500 (V = 4.5 V) ns r f CC 0 to 400 (V = 6.0 V) CC Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either V or GND. CC 2 2014-03-01