TC74HC86AF(F) Toshiba

TC74HC86AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC86AP, TC74HC86AF Quad Exclusive OR Gate The TC74HC86A is a high speed CMOS EXCLUSIVE OR 2 TC74HC86AP GATE fabricated with silicon gate C MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. Input and output buffers are provided which offer high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Features TC74HC86AF High speed: t = 10 ns (typ.) at V = 5 V pd CC Low power dissipation: I = 1 A (max) at Ta = 25C CC High noise immunity: V = V = 28% V (min) NIH NIL CC Output drive capability: 10 LSTTL loads Symmetrical output impedance: I = I = 4 mA (min) OH OL Balanced propagation delays: t t pLH pHL Wide operating voltage range: V (opr) = 2 to 6 V CC Pin and function compatible with 74LS86 Weight DIP14-P-300-2.54 : 0.96 g (typ.) Pin Assignment SOP14-P-300-1.27A : 0.18 g (typ.) IEC Logic Symbol Start of commercial production 1988-05 1 2014-03-01 TC74HC86AP/AF Truth Table A B Y H H L L H H H L H L L L Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range V 0.5 to 7 V CC DC input voltage V 0.5 to V + 0.5 V IN CC DC output voltage V 0.5 to V + 0.5 V OUT CC Input diode current I 20 mA IK Output diode current I 20 mA OK DC output current I 25 mA OUT DC V /ground current I 50 mA CC CC Power dissipation P 500 (DIP) (Note 2)/180 (SOP) mW D Storage temperature T 65 to 150 C stg Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = 40 to 65C. From Ta = 65 to 85C a derating factor of 10 mW/C shall be applied until 300 mW. Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage V 2 to 6 V CC Input voltage V 0 to V V IN CC Output voltage V 0 to V V OUT CC Operating temperature T 40 to 85 C opr 0 to 1000 (V = 2.0 V) CC Input rise and fall time t , t 0 to 500 (V = 4.5 V) ns r f CC 0 to 400 (V = 6.0 V) CC Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either V or GND. CC 2 2014-03-01