TC74VCX00FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VCX00FT, TC74VCX00FK Low-Voltage Quad 2-Input NAND Gate with 3.6-V Tolerant Inputs and Outputs The TC74VCX00FT/FK is a high-performance CMOS 2-input TC74VCX00FT NAND gate which is guaranteed to operate from 1.2-V to 3.6-V. Designed for use in 1.5V, 1.8V, 2.5V or 3.3V systems, it achieves high-speed operation while maintaining the CMOS low power dissipation. It is also designed with overvoltage tolerant inputs and outputs up to 3.6 V. All inputs are equipped with protection circuits against static discharge. TC74VCX00FK Features (Note) Low-voltage operation: V = 1.2 to 3.6 V CC High-speed operation : t = 2.8 ns (max) (V = 3.0 to 3.6 V) pd CC : t = 3.7 ns (max) (V = 2.3 to 2.7 V) pd CC : t = 7.4 ns (max) (V = 1.65 to 1.95 V) pd CC : t = 14.8 ns (max) (V = 1.4 to 1.6 V) pd CC : t = 37.0 ns (max) (V = 1.2 V) pd CC Output current : I /I = 24 mA (min) (V = 3.0 V) OH OL CC Weight : I /I = 18 mA (min) (V = 2.3 V) OH OL CC TSSOP14-P-0044-0.65A : 0.06 g (typ.) : I /I = 6 mA (min) (V = 1.65 V) OH OL CC VSSOP14-P-0030-0.50 : 0.02 g (typ.) : I /I = 2 mA (min) (V = 1.4 V) OH OL CC Latch-up performance: 300 mA ESD performance: Machine model 200 V Human body model 2000 V Package: TSSOP and VSSOP (US) Power-down protection provided on all inputs and outputs Note: Electrical Characteristics of V =1.50.1V and 1.2V apply only to products whose Lot Code is over3 12 CC Start of commercial production 1998-11 1 2014-03-01 TC74VCX00FT/FK Pin Assignment (top view) IEC Logic Symbol 1 1A & 3 1Y 1A 1 14 V 2 CC 1B 4 2A 6 1B 2 13 4B 2Y 5 2B 9 1Y 3 12 4A 3A 8 3Y 10 3B 2A 4 11 4Y 12 4A 11 4Y 13 4B 2B 5 10 3B 2Y 6 9 3A GND 7 8 3Y Truth Table Inputs Outputs A B Y L L H L H H H L H H H L Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Power supply voltage V 0.5 to 4.6 V CC DC input voltage V 0.5 to 4.6 V IN 0.5 to 4.6 (Note 2) DC output voltage V V OUT 0.5 to V + 0.5 CC (Note 3) Input diode current I 50 mA IK Output diode current I 50 (Note 4) mA OK DC output current I 50 mA OUT Power dissipation P 180 mW D DC V /ground current I /I 100 mA CC CC GND Storage temperature T 65 to 150 C stg Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: V = 0 V CC Note 3: High or low state. I absolute maximum rating must be observed. OUT Note 4: V < GND, V > V OUT OUT CC 2 2014-03-01