TC7SB3157CFU,LF(CT Toshiba

TC7SB3157CFU CMOS Digital Integrated Circuits Silicon Monolithic TC7SB3157CFU 1. Functional Description Single 1-of-2 Multiplexer/Demultiplexer 2. General The TC7SB3157CFU is a high-speed CMOS single 1-of-2 multiplexer/demultiplexer. The low ON resistance of the switch allows connections to be made with minimal propagation delay time. This device is 1 to 2 multiplexer/demultiplexer controlled by the select input (S). The A input is connected to B1 or B2 output based on the selection of Control input (S). All inputs are equipped with protection circuits against static discharge. 3. Features (1) AEC-Q100 (rev.H) Grade 1 qualified (Note 1) (2) Wide operating temperature range: T = -40 to 125 (Note 2) opr (3) Operating voltage: V = 1.65 to 5.5 V CC (4) ON capacitance: C = 15 pF Switch On (typ.) V = 5.0 V I/O CC (5) ON resistance: R = 4 (typ.) V = 4.5 V, V = 0 V ON CC IS (6) Package: US6 Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales representative. Note 2: For devices with the ordering part number ending in (CT. T = -40 to 85 for the other devices. opr 4. Packaging and Pin Assignment 1: B2 2: GND 3: B1 4: A 5: V CC 6: S US6 Start of commercial production 2020-09 2016-2021 2021-03-31 1 Toshiba Electronic Devices & Storage Corporation Rev.5.0TC7SB3157CFU 5. Marking 6. Block Diagram 7. Principle of Operation 7.1. Truth Table Inputs Function S L A port = B1 port H A port = B2 port 8. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Note Rating Unit Supply voltage V -0.5 to 7.0 V CC Input voltage (S) V -0.5 to 7.0 IN Switch I/O voltage V -0.5 to V +0.5 S CC Clamp diode current I -50 mA IK Switch I/O current I 50 S Power dissipation P 200 mW D V /ground current I /I 100 mA CC CC GND Storage temperature T -65 to 150 stg Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2016-2021 2021-03-31 2 Toshiba Electronic Devices & Storage Corporation Rev.5.0