X-On Electronics has gained recognition as a prominent supplier of TD62502FG(O) Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. TD62502FG(O) Bipolar Transistors - Pre-Biased are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

TD62502FG(O) Toshiba

TD62502FG(O) electronic component of Toshiba
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Part No.TD62502FG(O)
Manufacturer: Toshiba
Category: Bipolar Transistors - Pre-Biased
Description: Trans Digital BJT NPN 35V 200mA 16-Pin SOP
Datasheet: TD62502FG(O) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
92: USD 1.1771 ea
Line Total: USD 108.29 
Availability - 1584
Ship by Fri. 18 Oct to Thu. 24 Oct
MOQ: 92  Multiples: 1
Pack Size: 1
Availability Price Quantity
1584
Ship by Fri. 18 Oct to Thu. 24 Oct
MOQ : 92
Multiples : 1
92 : USD 1.1771
100 : USD 1.1245
250 : USD 1.0793
500 : USD 1.0404
1000 : USD 1.0065

   
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Product Category
RoHS - XON
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We are delighted to provide the TD62502FG(O) from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TD62502FG(O) and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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TD62502~503PG/FG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62502PG,TD62502FG,TD62503PG,TD62503FG 7ch Single Driver: Common Emitter The TD62502PG/FG and TD62503PG/FG Series are comprised TD62502PG, TD62503PG of seven NPN transistor arrays. Applications include relay, hammer, lamp and display (LED) drivers. Features Output current (single output) 200 mA (max) High sustaining voltage output 35 V (min) TD62502FG, TD62503FG Inputs compatible with various types of logic. TD62502PG/FG : R = 10.5 k + 7 V Zener Diode 14 to 25 V P-MOS IN TD62503PG/FG : R = 2.7 k TTL, 5 V C-MOS IN Package Type-PG: DIP-16 pin Package Type-FG: SOP-16 pin Weight DIP16-P-300-2.54A: 1.11g (typ.) SOP16-P-225-1.27: 0.16g (typ.) Pin Assignment (top view) Note: NC pin assignment O1 O2 O3 O4 O5 O6 O7 NC The NC pin is not assigned to an internal chip of 16 15 14 13 12 11 10 9 these products hence, no need to assign necessarily. If it is needed, Toshiba recommends that you connect the NC pin to the common emitter (GND). 1 2 3 4 5 6 7 8 I1 I2 I3 I4 I5 I6 I7 COM-E 1 2009-12-14 TD62502~503PG/FG Schematics (each driver) TD62502PG/FG Output 7 V 10.5 k Input (*) (*) (*) (*) (*) (*) Common emitter TD62503PG/FG Output R 1 Input (*) (*) (*) (*) (*) (*) Common emitter R = 2.7 k 1 : Parasitic diodes Note: The input and output parasitic diodes cannot be used as clamp diodes. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-emitter voltage V 35 V CEO Collector-base voltage V 50 V CBO Collector current I 200 mA/ch C Input voltage V 0.5 to 30 V IN PG 1.0 Power dissipation P W D FG 0.625 (Note) Operating temperature T 40 to 85 C opr Storage temperature T 55 to 150 C stg Note: On Glass Epoxy PCB (30 30 1.6 mm Cu 50%) Operating Ranges (Ta = 40 to 85C) Characteristics Symbol Condition Min Typ. MaxUnit Collector-emitter voltage V 0 35 V CEO Collector-base voltage V 0 50 V CBO Collector current I 0 150 mA/ch C TD62502PG/FG 14.0 25 Input voltage I = 1 mA, I = 10 mA V V IN (ON) IN C (Output on) TD62503PG/FG 2.4 25 TD62502PG/FG 0 7.0 Input voltage V I 10 A V IN (OFF) C (Output off) TD62503PG/FG 0 0.4 PG 0.360 Power dissipation P W D FG (Note) 0.325 Note: On Glass Epoxy PCB (30 30 1.6 mm Cu 50%) 2 2009-12-14 10 k 10 k

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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