TLP118 TOSHIBA PHOTOCOUPLER IRED & PHOTO-IC TLP118 Unit: mm PDP (Plasma Display Panel) FA (Factory Automation) Interfaces of measuring and control instruments Operate at high ambient temperatures up to 125C The Toshiba TLP118 consists of an infrared emitting diodes and integrated high-gain, high-speed photodetectors. The TLP118 is housed in the SO6 package. The output stage is an open collector type. The photodetector has an internal Faraday shield that provides a guaranteed common-mode transient immunity of 15 kV/ s. Inverter logic type (Open collector output) Package: SO6 pin Guaranteed performance over: -40 to 125C Power supply voltage: 4.5 to 5.5 V Input threshold current: I = 5.0 mA (max) JEDEC FH JEITA Propagation delay time t /t : 60 ns (max) pHL pLH TOSHIBA 114L1 Common-mode transient immunity: 15 kV/ s (min) Weight: 0.08 g (typ.) Isolation voltage: 3750 Vrms (min) UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Pin Configuration (Top View) 1 6 1:ANODE VCC 3:CATHODE 4:GND Note 1 : When VDE approved type is needed, 5 5:V (Output) O please designate the Option(V4). 6:V CC GND 4 3 SHIELD Truth Table Schematic Input LED Output I CC ON L H V 6 CC L OFF H I F I O V 5 O 1 Construction Mechanical Ratings 3 GND 4 SHIELD Creepage distance 5.0 mm (min) Clearance distance 5.0 mm (min) Start of commercial production Insulation thickness 0.4 mm (min) 2009-10 2019 1 2019-05-27 Toshiba Electronic Devices & Storage Corporation TLP118 Absolute Maximum Ratings (Ta=25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current I 25 mA F Forward Current Derating (Ta 110C) I /C -0.67 mA/C F Pulse Forward Current (Note 1) I 50 mA FP Pulse Forward Current Derating (Ta 110C) I /C -1.34 mA/C FP Input Power Dissipation PD 40 mW Input power Dissipation Derating (Ta > 85C) PD/C -1.0 mW/C Reverse Voltage V 5 V R Output Current 1 (Ta 125C) I 25 mA O Output Voltage V 6 V O Supply Voltage V 6 V CC Output Power Dissipation P 80 mW O Output Power Dissipation Derating (Ta 110C) P /C -2.0 mW/C O Operating Temperature Range T -40 to 125 C opr Storage Temperature Range T -55 to 125 C stg Lead Soldering Temperature (10 s) T 260 C sol Isolation Voltage (AC,60 s, R.H. 60 %) (Note 2) BV 3750 V S rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width 1 ms, duty = 50 %. Note 2: This device is regarded as a two terminal device: pins 1 and 3 are shorted together, as are pins 4, 5 and 6. Recommended Operating Conditions CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT Input Current , High Level I 7.5 15 mA FH Input Voltage , Low Level V 0 0.8 V FL Supply Voltage* V 4.5 5.5 V CC Operating Temperature T -40 125 C opr * This item denotes operating range, not meaning of recommended operating conditions. Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-05-27 Toshiba Electronic Devices & Storage Corporation DETECTOR LED