Product Information

TLP170A(TP,F)

TLP170A(TP,F) electronic component of Toshiba

Datasheet
MOSFET Output Optocouplers Photorelay(MOS FET) IFT:1mA(max)
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

24: USD 1.6236 ea
Line Total: USD 38.97

12125 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 24  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
11717 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 25
Multiples : 1
25 : USD 1.6412
50 : USD 1.5007
100 : USD 1.2213
200 : USD 1.1425
500 : USD 1.1378
1000 : USD 1.0115
2000 : USD 0.9547

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Isolation Voltage
Packaging
Output Type
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Additional Infomation About Product

TLP170A TOSHIBA Photocoupler Photorelay TLP170A Telecommunications Unit: mm Control Equipment Data Acquisition System Security Equipment Measurement Equipment The Toshiba TLP170A consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a 4-pin SOP package. This photorelay requires 1mA of LED current to turn it on. It is suitable for applications that need electrical power savings. 4-pin SOP (2.54SOP4): Height = 2.1 mm, pitch = 2.54 mm Normally open (1-Form-A) device Peak off-state voltage: 60 V (min) Trigger LED current: 1 mA (max) ON-state current: 400 mA (max) ON-state resistance: 2 (max) Isolation voltage: 1500 Vrms (min) JEDEC UL recognized: UL1577, File No.E67349 c-UL recognized JEITA CSA Component Acceptance Service No. 5A File No.E67349 TOSHIBA 11-5H1 Weight: 0.1 g (typ.) Pin Configuration (top view) 1 4 2 3 1: Anode 2: Cathode 3: Drain 4: Drain Internal Circuit 1 4 2 3 Start of commercial production 2009/06 1 2014-09-01 TLP170A Absolute Maximum Rating (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I /C 0.5 mA/C F Reverse voltage V 5 V R LED Pulse forward current I 1 A FP (100 s pulse, 100 pps) Junction temperature T 125 C j OFF-state output terminal voltage V 60 V OFF ON-state current I 400 mA ON Detector Forward current derating (Ta 25C) I /C 4.0 mA/C ON Junction temperature T 125 C j Storage temperature T 55 to 125 C stg Operating temperature T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 1 minute, R.H. 60%) (Note 1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: LED pins are shorted together. Detector pins are also shorted together. Recommended Operating Conditions Characteristics Symbol MinTyp.MaxUnit Supply voltage V 48 V DD Forward current I 2 25 mA F ON-state current I 320 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Forward voltage V I = 10 mA 1.0 1.15 1.3 V F F LED Reverse current I V = 5 V 10 A R R Capacitance C V = 0, f = 1 MHz 30 pF T OFF-state current I V = 60 V 1 1000 nA OFF OFF Detector Capacitance C V = 0, f = 1 MHz 130 pF OFF 2 2014-09-01

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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