TLP170D(F) Toshiba

TLP170D TOSHIBA Photocoupler IRED & Photo-MOSFET TLP170D PBX Unit: mm Modem Fax Card Telecommunication Security Equipment Measurement Equipment The Toshiba TLP170D consists of an infrared emitting diode optically coupled to a photo-MOSFET in a 4-pin SOP package. This photorelay requires 1 mA of LED current to turn it on. It is suitable for applications that need electrical power saving. SOP 4 pin (2.54SOP4): 1-Form-A Peak off-state voltage: 200 V (min) Trigger LED current: 1 mA (max) ON-state current: 200 mA (max) ON-state resistance: 8 (max) Isolation voltage: 1500 Vrms (min) JEDEC UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A JEITA File No.E67349 TOSHIBA 11-5H1 VDE-approved: EN 60747-5-5 (Note 1) Weight: 0.1 g (typ.) Note 1: When a VDE approved type is needed, please designate the Option(V4). Pin Configuration (top view) 1 4 2 3 1: Anode 2: Cathode 3: Drain 4: Drain Internal Circuit 1 4 2 3 Start of commercial production 2009-06 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP170D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I /C 0.5 mA/C F Pulse forward current I 1 A FP (100 s pulse, 100 pps) LED Reverse voltage V 5 V R Diode power dissipation P 50 mW D P /C -0.5 mW/C Diode power dissipation derating (Ta 25C) D Junction temperature T 125 C j Off-state output terminal voltage V 200 V OFF On-state current I 200 mA ON On-state RMS current derating I /C 2.0 mA/C ON (Ta 25C) Detector Output power dissipation P 300 mW C Output power dissipation derating (Ta 25C) P / C 3.0 mW / C C Junction temperature T 125 C j 55 to Storage temperature range T C stg 125 Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1:Device considered a two-terminal device: pins1 and 2 shorted together and pins 3 and 4 shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 160 V DD Forward current IF 2 25 mA ON-state current I 160 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation