TLP176D(F) Toshiba

TLP176D TOSHIBA Photocoupler IRED & Photo-MOSFET TLP176D Modem Fax Card Unit: mm PBX Telecommunication The TOSHIBA TLP176D consists of an infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly. The TLP176D is suitable for modem and PBX applications which require space savings. SOP 4 pin (2.54SOP4): 1-form-A Peak off-state voltage: 200 V (min) Trigger LED current: 3 mA (max) On-state current: 200 mA (max) JEDEC On-state resistance: 8 (max) JEITA Isolation voltage: 1500 Vrms (min) TOSHIBA 11-5H1 UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A Weight: 0.1 g (typ.) File No.E67349 VDE-approved: EN 60747-5-5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(V4). Pin Configuration (top view) 1 4 2 3 1: Anode 2: Cathode 3: Drain 4: Drain Internal Circuit 1 4 2 3 Start of commercial production 1998-03 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP176D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I /C 0.5 mA/C F Pulse forward current (100 s pulse, 100 pps) I 1 A FP LED Reverse voltage V 5 V R Diode power dissipation P 50 mW D P /C -0.5 mW/C Diode power dissipation derating (Ta 25C) D Junction temperature T 125 C j Off-state output terminal voltage V 200 V OFF On-state current I 200 mA ON On-state RMS current derating (Ta 25C) I /C 2.0 mA/C ON Detector Output power dissipation P 180 mW O Output power dissipation derating (Ta 25C) P / C 1.8 mW / C O Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Device considered a two-terminal device: pins1 and 2 shorted together and pins 3 and 4 shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 150 200 V DD Forward current IF 5 7.5 25 mA On-state current I 130 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation