TLP209D(F) Toshiba

TLP209D TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP209D MEASUREMENT INSTRUMENTS LOGIC IC TESTERS / MEMORY TESTERS Unit: mm BOARD TESTERS / SCANNERS The TOSHIBA TLP209D consists of an infrared emitting diode optically coupled to a photo-MOSFET in a plastic SOP package. Its characteristics include low OFF-state current and low output pin capacitance, enabling it to be used in high-frequency measurement instruments. Features 8 pin SOP (2.54SOP8) : 2.1 mm high, 2.54 mm pitch 2-Form-A Peak Off-State Voltage : 200 V (min) Trigger LED Current : 3 mA (max) JEDEC On-State Current : 50 mA (max) JEITA On-State Resistance : 50 (max) TOSHIBA 11-10H1 Output Capacitance : 20 pF (max) Weight: 0.2 g (typ.) Isolation Voltage : 1500 Vrms (min) UL-recognized : UL 1577, File No.E67349 Pin Configuration (top view) Schematic 1, 3 : ANODE 1 8 2, 4 : CATHODE 1 8 5 : DRAIN D1 6 : DRAIN D2 7 : DRAIN D3 8 : DRAIN D4 2 7 2 7 3 6 3 6 4 5 4 5 Start of commercial production 2008-10 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP209D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward Current I 50 mA F Forward Current Derating (Ta 25C) I /C -0.5 mA/C F Reverse Voltage V 5 V R Diode Power Dissipation P 50 mW D Diode Power Dissipation Derating (Ta >25C) P /C -0.5 mW/C D Junction Temperature T 125 C j Off-State Output Terminal Voltage V 200 V OFF On-State Current I 50 mA ON On-State Current Derating (Ta 25C) I /C -0.5 mA/C ON Output Power Dissipation P 125 mW O Output Power Dissipation Derating (Ta 25C) P / C -1.25 mW / C O Junction Temperature T 125 C j Storage Temperature Range T -55 to 125 C stg Operating Temperature Range T -40 to 85 C opr Lead Soldering Temperature (10 s) T 260 C sol Isolation Voltage (AC, 60 s, R.H. 60 %) (NOTE1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1 : Device considered a two-terminal device : LED side pins shorted together, and DETECTOR side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply Voltage V 160 V DD Forward Current I 5 7.5 15 mA F On-State Current I 50 mA ON Operating Temperature T -20 60 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward Voltage V I = 10 mA 1.0 1.15 1.3 V F F Reverse Current I V = 5 V 10 A R R Capacitance C V = 0 V, f = 1 MHz 30 pF T Off-State Current I V = 160 V 1 nA OFF OFF Capacitance C V = 0 V, f = 1 MHz 15 20 pF OFF 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation DETECTOR LED DETECTOR LED