TLP176A(F) Toshiba

TLP176A TOSHIBA Photocoupler IRED & Photo MOS FET TLP176A PBX Measurement Instrument Unit mm Data Acouisition Measurement Equipment The TOSHIBA TLP176A consists of an infrared emitting diode optically coupled to a photo MOS FET in a SOP, which is suitable for surface mount assembly. The TLP176A is suitable for replacement of mechanical relays in many applications ehich require space savings. 4-pin SOP(2.54SOP4) Peak offstate voltage : 60V(min) Trigger LED current : 3mA(max) On-state current : 400mA(max) On-state resistance : 2 (max) Isolation voltage : 1500Vrms(min) UL-recognized : UL 1577, File No.E67349 JEDEC cUL-recognized : CSA Component Acceptance Service No.5A File No.E67349 JEITA TOSHIBA 11-5H1 VDE-approved : EN 60747-5-5 (Note 1) Weight: 0.1 g (typ.) Note 1: When a VDE approved type is needed, please designate the Option(V4). Pin Configuration Schematic (top view) 1-Form-A 1 4 1 4 4 3 2 3 1 2 2 3 1. : Anode 2. : Cathode 3. : Drain 4. : Drain Start of commercial production 1998-03 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP176A Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I / C 0.5 mA / C F Pulse forward current (100s pulse,100pps) I 1 A FP Reverse voltage V 5 V R P 50 mW Diode power dissipation D Diode power dissipation derating (Ta 25C) P /C -0.5 mW/C D Junction temperature T 125 C j Off state output terminal voltage V 60 V OFF Onstate current I 400 mA ON Onstate current derating (Ta 25C) l / C 4.0 mA / C ON Output power dissipation P 180 mW O Output power dissipation derating (Ta 25C) P / C 1.8 mW / C O Junction temperature T 125 C j Storage temperature range T 55 to 100 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature(10 s) T 260 C sol Isolation voltage (AC,60 s, R.H. 60 %) (Note 1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: Pin 1 and 2 shorted together and pin 3 and 4 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage V 48 V DD Forward current I 5 7.5 25 mA F Onstate current I 300 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation Detector LED