TLP2200(TP1,F) Toshiba

TLP2200 TOSHIBA Photocoupler IRED & Photo-IC TLP2200 Isolated Bus Driver Unit: mm High Speed Line Receiver Microprocessor System Interfaces MOS FET Gate Driver Direct Replacement for HCPL 2200 The TOSHIBA TLP2200 consists of an infrared emitting diode and integrated high gain, high speed photodetector. This unit is 8 lead DIP package. The detector has a three state output stage that eliminates the need for pull up resistor, and builtin Schmitt trigger. The detector IC has an internal shield that provides a guaranteed common mode transient immunity of 1000V / s. Input current: I = 1.6 mA F Power supply voltage: V = 4.5 to 20 V CC Switching speed: 2.5MBd guaranteed Common mode transient immunity: 1000V / s (min) TOSHIBA 11 10C4S Guaranteed performance over temperature: 0 to 85C Weight: 0.54 g (typ.) Isolation voltage: 2500 Vrms (min) UL-recognized: UL 1577, File No.E67349 Pin Configuration (top view) cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 1: N.C. 1 8 V CC 2: Anode Truth Table (positive logic) 3: Cathode 2 7 4: N.C. Input Enable Output 3 6 5: GND GND 6: V (enable) E H H Z 4 5 SHIELD 7: V (output) O L H Z 8: V CC H L H L L L Schematic I CC I F V CC 8 I O 2 V O 7 V I E F 3 V E 6 GND SHIELD 5 Start of commercial production 1986-07 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP2200 Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Input current, on I 1.6 5 mA F(ON) Input current, off I 0 0.1 mA F(OFF) Supply voltage V 4.5 20 V CC Enable voltage high VEH 2.0 20 V Enable voltage low V 0 0.8 V EL Fan out (TTL load) N 4 Operating temperature T 0 85 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Absolute Maximum Ratings (no derating required up to 70C) Characteristic Symbol Rating Unit Forward current I 10 mA F Peak transient forward current (Note 1) I 1 A FPT Reverse voltage V 5 V R Input Power Dissipation PD 45 mW Input power dissipation derating (Ta 70C) P /Ta -0.86 mW/C D Output current I 25 mA O Supply voltage V 0.5 to 20 V CC Output voltage V 0.5 to 20 V O Three state enable voltage V 0.5 to 20 V E Output Power Dissipation P 100 mW O Output Power Dissipation Derating (Ta 70C) P /C -1.9 mW/C O Total package power dissipation (Note 2) P 210 mW T Operating temperature range T 40 to 85 C opr Storage temperature range T 55 to 125 C stg Lead solder temperature (10 s) (**) T 260 C sol Isolation voltage BV 2500 Vrms S (AC 60 s, R.H. 60 %,Ta = 25C) (Note 3) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Pulse width 1 s, 300 pps. (Note 2) Derate 4.5 mW / C above 70 C ambient temperature. (Note 3) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5,6,7 and 8 shorted together (**) 1.6 mm below seating plane. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation D e te c to r LE D