TLP222A-2(LF1,F) Toshiba

TLP222A,TLP222A-2 TOSHIBA Photocoupler Photorelay TLP222A, TLP222A-2 Telecommunications Unit: mm Measurement and Control Equipment Data Acquisition System Measurement Equipment TLP222A The Toshiba TLP222A and TLP222A-2 consist of an infrared emitting diode optically coupled to a photo-MOSFET in a DIP package whose withstanding voltage is 60 V. These photorelays have higher output current rating than phototransistor-type photocoupler hence, they are suitable for use as On/Off control for high current. Normally open (1-form-A and 2-form-A) devices Peak off-state voltage: 60 V (min) Trigger LED current: 3 mA (max) On-state current: 500 mA (max) On-state resistance: 2 (max) Isolation voltage: 2500 Vrms (min) TOSHIBA 11-5B2S UL-recognized: UL 1577, File No.E67349 Weight: 0.26 g (typ.) cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 TLP222A-2 Pin Configuration (top view) TLP222A TLP222A-2 1 4 1 8 2 7 2 3 3 6 1: Anode 2: Cathode 3: Drain 4 5 TOSHIBA 11-10C4S 4: Drain Weight: 0.54 g (typ.) 1, 3 : Anode 2, 4 : Cathode 5 : Drain D1 6 : Drain D2 7 : Drain D3 8 : Drain D4 Start of commercial production 2002-03 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP222A,TLP222A-2 Absolute Maximum Rating (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I /C 0.5 mA/C F Peak forward current I 1 A FP Reverse voltage V 5 V R LED P 50 mW Diode power dissipation D P /C -0.5 mW/C Diode power dissipation derating (Ta 25C) D Junction temperature T 125 C j Off-state output terminal voltage V 60 V OFF TLP222A One channel On-state operation I 500 mA ON current TLP222A-2 Two channel operations TLP222A Detector Forward One channel current operation I /C 5.0 mA/C ON derating TLP222A-2 (Ta 25C) Two channel operations Output power dissipation P 400 mW O Output power dissipation derating (Ta 25C) P / C 4.0 mW / C O Junction temperature T 125 C j Storage temperature T 55 to 125 C stg Operating temperature T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 2500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: LED pins are shorted together. Detector pins are also shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 48 V DD Forward current I 5 7.5 25 mA F On-state current I 500 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 10 mA 1.0 1.15 1.3 V F F LED Reverse current I V = 5 V 10 A R R Capacitance C VF = 0 V, f = 1 MHz 30 pF T Off-state current I V = 60 V 1 A OFF OFF Detector Capacitance C V = 0 V, f = 1 MHz 130 pF OFF 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation