TLP3100 TOSHIBA Photocoupler Photorelay TLP3100 Measurement Equipment Unit: mm FA (Factory Automation) Power Line Control The Toshiba TLP3100 consists of an infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface- mount assembly. The TLP3100 features high ON-state current and low ON-state resistance, hence the TLP3100 is suitable to control a power line. 6-pin SOP (2.54SOP6): 2.1 mm high, 2.54 mm pitch Normally opened (form A) device Peak OFF-state voltage: 20 V (min) Trigger LED current: 3 mA (max) ON-state current: 2.5 A (max) (Ta=50C) ON-state resistance: 0.02 (typ.), 0.05 (max) Capacitance between output terminals: 1000 pF (typ.) OFF-state current: 10 nA (max) Isolation voltage: 1500 V (min) rms UL-recognized: UL 1577, File No.E67349 TOSHIBA 11-7C1 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 Weight: 0.13 g (typ.) Pin Configuration (top view) 1: Anode 1 6 2: Cathode 3: N.C. 4: Drain D1 2 5 5: Source 6: Drain D2 3 4 Schematic Start of commercial production 2008-04 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP3100 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 30 mA F Forward current derating (Ta 25C) I /C 0.3 mA/C F Reverse voltage VR 5 V LED Diode power dissipation P 50 mW D P /C -0.5 mW/C Diode power dissipation derating (Ta 25C) D Junction temperature T 125 C j Off-state output terminal voltage V 20 V OFF A connection 2.5 On-state B connection I 2.5 A ON current C connection 5.0 On-state A connection 33.3 Detector current B connection I /C 33.3 mA/C ON derating (Ta 50C) C connection 66.7 Output power dissipation P 364.5 mW O Output power dissipation derating (Ta 50C) P / C 4.86 mW / C O Junction temperature T 125 C j Storage temperature T 55 to 125 C stg Operating temperature T 40 to 85 C opr Lead soldering temperature (10 s) Tsol 260 C Isolation voltage BV 1500 Vrms S (AC, 60 s, R.H. 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Device considered a two-terminal device: Pins 1 and 2 shorted together, and pins 3 and 4 shorted together. Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 20 V DD Forward current I 5 10 20 mA F Operating temperature T -20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation