TLP222G-2(F) Toshiba

TLP222G,TLP222G-2 TOSHIBA Photocoupler Photorelay TLP222G, TLP222G-2 Cordless Telephones PBX Modems Unit: mm The Toshiba TLP222G series consist of an infrared emitting diode optically coupled to a photo-MOSFET in a DIP package. The TLP222G series are a bi-directional switch, which can replace mechanical relays in many applications. TLP222G: 4-pin DIP (DIP4), 1-channel type (1-form-A) TLP222G-2: 8-pin DIP (DIP8), 2-channel type (2-form-A) Peak Off-state voltage: 350 V (min) Trigger LED current: 3 mA (max) On-state current: 120 mA (max) On-state resistance: 35 (max, t < 1 s) On-state resistance: 50 (max, continuous) Isolation voltage: 2500 Vrms (min) UL-recognized: UL 1577, File No.E67349 TOSHIBA 11-5B2S cUL-recognized: CSA Component Acceptance Service No.5A Weight: 0.26 g (typ.) File No.E67349 Pin Configuration (top view) TLP222G TLP222G-2 1 4 1 8 2 7 2 3 3 6 1: Anode 2: Cathode TOSHIBA 11-10C4S 3: Drain 4 5 4: Drain Weight: 0.54 g (typ.) 1, 3 : Anode 2, 4 : Cathode 5 : Drain D1 6 : Drain D2 7 : Drain D3 8 : Drain D4 Start of commercial production 2001-12 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP222G,TLP222G-2 Absolute Maximum Rating (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I /C 0.5 mA/C F Peak forward current (100 s pulse, 100 pps) I 1 A FP Reverse voltage V 5 V R LED P 50 mW Diode power dissipation D P /C -0.5 mW/C Diode power dissipation derating (Ta 25C) D Junction temperature T 125 C j Off-state output terminal voltage V 350 V OFF TLP222G One channel On-state I 120 mA operation ON current TLP222G-2 Two channel operations TLP222G On-state Detector One channel current I /C 1.2 mA/C operation ON derating TLP222G-2 (Ta 25C) Two channel operations Output power dissipation P 450 mW O Output power dissipation derating (Ta 25C) P / C 4.5 mW / C O Junction temperature T 125 C j Storage temperature range Tstg 55 to 125 C Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 2500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 280 V DD Forward current I 5 7.5 25 mA F On-state current I 100 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 10 mA 1.0 1.15 1.3 V F F LED Reverse current I V = 5 V 10 A R R Capacitance C VF = 0 V, f = 1 MHz 30 pF T Off-state current I V = 350 V 1 A OFF OFF Detector Capacitance C V = 0 V, f = 1 MHz 30 pF OFF 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation