TLP227A,TLP227A-2 TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP227A, TLP227A-2 CORDLESS TELEPHONE PBX Unit: mm MODEM TLP227A The TOSHIBA TLP227A series consist of an infrared emitting diode optically coupled to a photo-MOS FET in a plastic DIP package. The TLP227A series are a bi-directional switch, which can replace mechanical relays in many applications. Features TLP227A : 4 pin DIP (DIP4) 1 Channel Type (1 Form A) TLP227A-2 : 8 pin DIP (DIP8) 2 Channel Type (2 Form A) Peak Off-State Voltage : 60 V (min) Trigger LED Current : 3 mA (max) On-State Current : 500 mA (max) JEDEC On-State Resistance : 2 (max) JEITA TOSHIBA 11-5B2S Isolation Voltage : 2500 Vrms (min) Weight: 0.26 g (typ.) UL-recognized : UL 1577, File No.E67349 cUL-recognized : CSA Component Acceptance Service No.5A Unit: mm File No.E67349 TLP227A-2 Pin Configuration (top view) TLP227A TLP227A-2 1 1 4 8 2 3 2 7 1 : ANODE 2 : CATHODE 3 : DRAIN 4 : DRAIN 3 6 JEDEC JEITA TOSHIBA 11-10C4S Weight: 0.54 g (typ.) 4 5 1, 3 : ANODE 2, 4 : CATHODE 5 : DRAIN D1 6 : DRAIN D2 7 : DRAIN D3 8 : DRAIN D4 Start of commercial production 2001-02 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP227A,TLP227A-2 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward Current IF 50 mA Forward Current Derating (Ta 25C) I /C -0.5 mA/C F Peak Forward Current (100 s pulse, 100 pps) I 1 A FP Reverse Voltage V 5 V R P 50 mW Diode Power Dissipation D Diode Power Dissipation Derating (Ta 25C) P /C -0.5 mW/C D Junction Temperature T 125 C j Off-State Output Terminal Voltage V 60 V OFF On-State Current I 500 mA ON On-State Current Derating (Ta 25C) I /C -5.0 mA/C ON Output Power Dissipation P 450 mW O Output Power Dissipation Derating (Ta 25C) P / C -4.5 mW / C O Junction Temperature Tj 125 C Storage Temperature Range T -55 to 125 C stg Operating Temperature Range T -40 to 85 C opr Lead Soldering Temperature (10 s) T 260 C sol Isolation Voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 2500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device : LED side pins shorted together, and DETECTOR side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply Voltage V 48 V DD Forward Current I 5 7.5 25 mA F On-State Current I 400 mA ON Operating Temperature T -20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward Voltage V I = 10 mA 1.0 1.15 1.3 V F F Reverse Current I V = 5 V 10 A R R Capacitance C V = 0 V, f = 1 MHz 30 pF T Off-State Current I V = 60 V 1 A OFF OFF Capacitance C V = 0 V, f = 1 MHz 130 pF OFF 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation DETECTOR LED DETECTOR LED