TLP227G,TLP227G 2 TOSHIBA Photocoupler Photo Relay TLP227G, TLP227G2 Cordless Telephone Unit: mm PBX Modem TLP227G The TOSHIBA TLP227G series consist of an infrared emitting diode optically coupled to a photo MOS FET in a plastic DIP package. The TLP227G series are a bidirectional switch which can replace mechanical relays in many applications. TLP227G: 4 pin DIP(DIP4), 1 channel type(1 form A) TLP227G2: 8 pin DIP(DIP8), 2 channel type(2 form A) Peak offstate voltage: 350 V (min) Trigger LED current: 3 mA (max) On state current: 120 mA (max) TOSHIBA 11 5B2S On state resistance: 35 (max) Weight: 0.26g (typ.) Isolation voltage: 2500 Vrms (min) 1 Form A 4 3 Isolation thickness: 0.4mm(min) UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 1 2 VDE-approved: EN 60747-5-5 (Note 1) Note 1 : When a VDE approved type is needed, TLP227G-2 please designate the Option(V4). Pin Configuration (top view) TLP227G-2 TLP227G 1 8 1 4 7 2 2 3 1, 3: Anode 2, 4: Cathode 1: Anode 5: Drain 1 2: Cathode 6 6: Drain 2 3: Drain 1 3 4: Drain 2 7: Drain 3 TOSHIBA 11 10C4S 8: Drain 4 Weight: 0.54g (typ.) 8 5 2 Form A 5 4 Internal Circuit (TLP227G) 1 4 1 4 Start of commercial production 3 2 1995-11 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP227G,TLP227G 2 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I / C 0.5 mA / C F Peak forward current (100s pulse, 100pps) I 1 A FP Reverse voltage V 5 V R P 50 mW Diode power dissipation D P /C -0.5 mW/C Diode power dissipation derating (Ta 25C) D Junction temperature T 125 C j Off-state output terminal voltage V 350 V OFF TLP227G 120 One channel 120 On-state current I mA ON TLP227G2 Both channel (Note 1) 100 TLP227G 1.2 On-state current One channel I / C 1.2 mA / C ON derating(Ta 25C) TLP227G2 Both channel (Note 1) 1.0 TLP227G 432 Output power dissipation P mW O TLP227G2 600 TLP227G 4.32 Output power dissipation derating P / C mW / C O (Ta 25C) TLP227G2 -6.0 Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s) Tsol 260 C Isolation voltage (AC, 60 s, R.H. 60 %) (Note 2) BV 2500 S Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1): Two channels operating simultaneously. (Note 2): Device considered a two-terminal device: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage V 280 V DD Forward current I 5 7.5 25 mA F On-state current I 100 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation LED Detector