TLP174GA TOSHIBA Photocoupler Photorelay TLP174GA ModemFax Cards, Modems in PC Unit: mm Telecommunications PBX Measurement Equipment The Toshiba TLP174GA consists of an infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly. Because of the high-voltage MOS FET used for the output stage, the TLP174G is suitable for replacement of dial pulse relay and hook relay of modem and facsimile, and also suitable for PBX and the line interface section of exchange. In addition, the MOS FET control circuit is provided the current limiting function, and it conforms to the FCC Part 68 new standard. 4-pin SOP (2.54SOP4): Height = 2.1 mm, Pitch = 2.54 mm 1-Form-A Peak Off-state voltage: 400 V (min) Trigger LED current: 3 mA (max) JEDEC On-state current: 120 mA (max) JEITA Limit current: 150 mA to 300 mA (t = 5 ms) On-state resistance: 35 (max) TOSHIBA 11-5H1 Isolation voltage: 1500 Vrms (min) Weight: 0.1 g (typ.) UL-recognized: UL 1577, File No.E67349 Pin Configuration (top view) 1 4 1: Anode 2: Cathode 3: Drain 4: Drain 2 3 Start of commercial production 2002-01 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP174GA Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta25C) I /C 0.5 mA/C F Peak forward current (100 s pulse, 100 pps) I 1 A FP LED Reverse voltage V 5 V R P 50 mW Diode power dissipation D P /C -0.5 mW/C Diode power dissipation derating (Ta 25C) D Junction temperature T 125 C j Off-state output terminal voltage V 400 V OFF On-state current I 120 mA ON On-state current derating (Ta25C) I /C 1.2 mA/C ON Detector Output power dissipation P 350 mW C mW Output power dissipation derating (Ta 25C) P / C 3.5 C / C Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 320 V DD Forward current I 5 7.5 25 mA F On-state current I 120 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 10 mA 1.0 1.15 1.3 V F F LED Reverse current I V = 5 V 10 A R R Capacitance between terminals C V = 0 V, f = 1 MHz 30 pF T F Off-state current I V = 400 V 1 A OFF OFF Detector Capacitance between terminals C V = 0 V, f = 1 MHz 70 pF OFF 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation
