TLP2601 TOSHIBA Photocoupler IRED & Photo IC TLP2601 Isolated Line Receiver Unit: mm Simplex / Multiplex Data Transmission ComputerPeripheral Interface Microprocessor System Interface Digital Isolation for A/D, D/A Conversion Direct Replacement for HCPL 2601 The TOSHIBA TLP2601 a photocoupler which combines an IRED as the emitter and an integrated high gain, high speed photodetector. The output of the detector circuit is an open collector, Schottky clamped transistor. A Faraday shield integrated on the photodetector chip reduces the effects of capacitive coupling between the input LED emitter and the high gain stages of the detector. This provides an effective common mode transient immunity of 1000V/ s. Input current thresholds: I = 5mA (max) F TOSHIBA 11 10C4S Isolation voltage: 2500Vrms (min) Weight: 0.54 g (typ.) Switching speed: 10MBd Common mode transient immunity: 1000V/ s (min) Pin Configuration (top view) Guaranteed performance over temp.: 0C to 70C UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service 1 8 No.5A File No.E67349 2 7 Truth Table (positive logic) 3 6 4 5 Input Enable Output SHIELD H H L Schematic L H H H L H I I F CC V 2 CC L L H I O + 8 V F V O . 6 3 - GND SHIELD 5 I E 7 V E A 0.01 to 0.1 F bypass capacitor must be connected between pins 8 and 5 (see Note 1) Start of commercial production 1985-01 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP2601 Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Input current, low level I 0 250 A FL Input current, high level I 6.3 (*) 20 mA FH Supply voltage**, output V 4.5 5.5 V CC High level enable voltage V 2.0 V V EH CC Low level enable voltage V 0 0.8 V EL Fan out (TTL load) N 8 Operating temperature T 0 70 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. (*) 6.3mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 5.0 mA or less. **This item denotes operating ranges, not meaning of recommended operating conditions. Absolute Maximum Ratings (no derating required) Characteristic Symbol Rating Unit Forward current I 20 mA F Reverse voltage V 5 V R Diode power dissipation P 100 mW D Diode power dissipation derating P /C -1.8 mW/C D (Ta 70C) Junction Temperature Tj 125 C Output current I 25 mA O Output voltage V 0.5 to 7 V O Supply voltage V 7 V CC (1 minute maximum) Enable input voltage V 5.5 V E (not to exceed V by more than 500mV) CC Output power dissipation P 40 mW C Output Power dissipation derating P / C -0.7 mW / C C (Ta 70C) Junction Temperature Tj 125 C Operating temperature range Topr 40 to 85 C Storage Temperature range T 55 to 125 C stg Lead Solder Temperature (10 s) T 260 C sol 2500 Vrms Isolation voltage BV S (R.H. 60 %, AC 60 s) (Note 10) 3540 V dc Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (**) 1.6 mm below seating plane. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation Detector LED