TLP2631 TOSHIBA photocoupler IRED & Photo IC TLP2631 Isolated Line Receiver Simplex / Multiplex Data Transmission Computer-Peripheral Interface Unit: mm Microprocessor System Interface Digital Isolation for A / D, D / A Conversion The TOSHIBA TLP2631 dual photocoupler consists of a pair of infrared emitting diode and integrated high gain, high speed photodetector. This unit is 8-lead DIP. The output of the detector circuit is an open collector, Schottky clamped transistor. A Faraday shield integrated on the photodetector chip reduces the effects of capacitive coupling between the input LED emitter and the high gain stages of the detector. This provides an effective common mode transient immunity of 1000 V/ s. Input current threshold: I = 5 mA (max) F Switching speed: 10MBd (typ.) Common mode transient immunity: 1000 V/ s (min) Guaranteed performance over temperature: 0 to 70C TOSHIBA 11 10C4S Isolation voltage: 2500 V (min) rms Weight: 0.54 g (typ.) UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 Truth Table (positive logic) Pin Configuration (top view) Input Output H L 1 : Anode 1 V 1 CC 8 L H 2 : Cathode 1 3 : Cathode 2 2 7 4 : Anode 2 5 : GND 3 6 Schematic 6 : V (Output 2) O2 GND 7 : V (Output 1) 4 5 O1 Shield I F1 I Shield CC 8 : V 8 1 CC V CC + I O1 7 V F1 V O1 2 I I O2 F2 4 6 V + O2 V F2 3 5 GND A 0.01 to 0.1 F bypass capacitor must be connected between pins 8 and 5(see Note 1). Start of commercial production 1986-03 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP2631 Absolute Maximum Ratings (no derating required up to 70C) Characteristic Symbol Rating Unit Forward current (each channel) I 20 mA F Pulse forward current (each channel)* I 30 mA FP Reverse voltage (each channel) V 5 V R Input power dissipation(each channel) P 25 mW D Input power dissipation derating (Ta 70C) PD/C -0.45 mW/C (each channel) Output current (each channel) I 16 mA O Output voltage (each channel) V 0.5 to 7 V O Supply voltage V 7 V CC (1 minute maximum) Output collector power P 40 mW O dissipation (each channel) Output power dissipation derating (Ta 70C) PO/C -0.75 mW/C (each channel) Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s)** T 260 C sol Isolation voltage BV 2500 Vrms S (AC, 60 s, R.H. 60 %, Ta=25C) (Note 3) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * t 1 msec duration. ** 2 mm below seating plane. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Input current, low level, each channel I 0 250 A FL Input current, high level, each channel I 6.3* 20 mA FH Supply voltage** V 4.5 5 5.5 V CC Fan out (TTL load, each channel) N 8 Operating temperature T 0 70 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. * 6.3 mA is a guard banded value which allows for at least 20 % CTR degradation. Initial input current threshold value is 5.0 mA or less. ** This item denotes operating ranges, not meaning of recommended operating conditions. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation Detector LED