TLP797J TOSHIBA Photocoupler Photo Relay TLP797J Telecommunication Unit: mm Measurement Instrumenation FA The TOSHIBA TLP797J consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package (DIP6). The TLP797J is a bi-directional switch can replace mechanical relays in many applications. 6 pin DIP (DIP6) 1-form-A Peak off-state voltage: 600 V (min) Trigger LED current: 5 mA (max) On-state current: 100 mA (max) On-state resistance: 35 (max) Isolation voltage: 5000 Vrms (min) UL recognized: UL1577, file No. E67349 JEDEC Option(D4) type JEITA VDE approved: DIN EN 60747-5-2 Certificate No. 40009302 TOSHIBA 11-7A8 Maximum operating insulation voltage: 890 Vpk Weight: 0.4 g (typ.) Maximum permissible over voltage: 6000 Vpk Note: When ordering an EN60747-5-2 approved device, Option (D4 should be designated. Construction mechanical rating Schematic 7.62 mm pitch 10.16 mm pitch standard type TLPXXXF type Creepage distance 7.0 mm (min) 8.0 mm (min) Clearance 7.0 mm (min) 8.0 mm (min) Insulation thickness 0.4 mm (min) 0.4 mm (min) Note: When applying safety standard certification, use the standard part number, e.g., TLP797J. Pin Configurations (top view) 1: Anode 1 6 2: Cathode 3: N.C. 2 5 4: Drain D1 5: Source 3 4 6: Drain D2 Start of commercial production 2001/07 1 2014-09-22 TLP797J Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating I /C 0.5 mA/C F (Ta 25C) LED Peak forward current I 1 A FP (100 s pulse, 100 pps) Reverse voltage V 5 V R Junction temperature T 125 C j Off-state output terminal voltage V 600 V OFF A connection 100 On-state current B connection I 100 mA ON C connection 200 Detector A connection 1.0 On-state current derating B connection I /C 1.0 mA/C ON (Ta 25C) C connection 2.0 Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 1 minute, R.H. 60%) BV 5000 Vrms S (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristics Symbol MinTyp.MaxUnit Supply voltage V 480 V DD Forward current I 7.5 15 25 mA F On-state current I 100 mA ON Operating temperature T 20 65 C opr Note: 2 2014-09-22