TMBT3904 TOSHIBA Transistor Silicon NPN Epitaxial Type TMBT3904 Audio Frequency General Purpose Amplifier Applications High voltage and high current : V = 50 V, I = 200 mA (max) CEO C Complementary to TMBT3906 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 60 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO 1. Base Collector current I 200 mA 2. Emitter C 3. Collector Base current I 30 mA B P 1) 320 mW C (Note Collector power dissipation SOT23 P ) 1000 mW C (Note 2 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. 2 (25.4mm x 25.4mm x 1.6mm, Cu Pad: 0.42mm x 3) Note 2: Mounted on an FR4 board. 2 (25.4mm x 25.4mm x 1.6mm, Cu Pad: 645mm ) Marking L W Start of commercial production 2015-01 2015-2018 2018-05-17 1 Toshiba Electronic Devices & Storage Corporation TMBT3904 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 60 V, I = 0 mA 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 mA 0.1 A EBO EB C VCE = 1 V, IC = 0.1 mA 60 V = 1 V, I = 1 mA 80 CE C DC current gain h V = 1 V, I = 10 mA 100 300 FE CE C V = 1 V, I = 50 mA 60 CE C VCE = 1 V, IC = 100 mA 30 I = 10 mA, I = 1 mA 0.2 C B Collector-emitter saturation voltage V CE (sat) I = 50 mA, I = 5 mA 0.3 C B V I = 10 mA, I = 1 mA 0.65 0.85 C B Base-emitter saturation voltage V BE (sat) IC = 50 mA, IB = 5 mA 0.95 Transition frequency f V = 20 V, I = 10 mA 300 MHz T CE C Collector output capacitance C V = 10 V, I = 0 mA, f = 1 MHz 1.7 3.5 pF ob CB E V = 5 V, I = 0.1 mA, f = 1 kHz, CE C Noise figure NF 5 dB R = 1 k g delay time td 35 OUTPUT INPUT 2.5 k rise time tr 35 Switching times ns 5 V V CC 0 storage time ts 200 = 3 V V 500 s BB = 1.9 V fall time tf 50 I = 10mA, I = -I = 1mA C B1 B2 2015-2018 2018-05-17 2 Toshiba Electronic Devices & Storage Corporation 56 3.9 k 270