X-On Electronics has gained recognition as a prominent supplier of TPN22006NH,LQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPN22006NH,LQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPN22006NH,LQ Toshiba

TPN22006NH,LQ electronic component of Toshiba
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Part No.TPN22006NH,LQ
Manufacturer: Toshiba
Category: MOSFETs
Description: N-Channel 60 V 9A (Ta) 700mW (Ta), 18W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Datasheet: TPN22006NH,LQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8648 ea
Line Total: USD 0.86 
Availability - 2745
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2745
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8648
10 : USD 0.6774
100 : USD 0.4887
250 : USD 0.4887
500 : USD 0.4025
1000 : USD 0.3749
3000 : USD 0.3565
6000 : USD 0.3473

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
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Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
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Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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We are delighted to provide the TPN22006NH,LQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPN22006NH,LQ and other electronic components in the MOSFETs category and beyond.

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TPN22006NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN22006NHTPN22006NHTPN22006NHTPN22006NH 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators Motor Drivers DC-DC Converters 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: Q = 4.5 nC (typ.) SW (4) Low drain-source on-resistance: R = 18 m (typ.) DS(ON) (5) Low leakage current: I = 10 A (max) (V = 60 V) DSS DS (6) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 0.1 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance Start of commercial production 2012-08 2014-01-07 1 Rev.2.0TPN22006NH 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 21 A D Drain current (DC) (Note 1) I 9 D Drain current (pulsed) (t = 1 ms) (Note 1) I 42 DP Power dissipation (T = 25) P 18 W c D Power dissipation (t = 10 s) (Note 3) P 1.9 W D Power dissipation (t = 10 s) (Note 4) P 0.7 W D Single-pulse avalanche energy (Note 5) E 21 mJ AS Avalanche current I 9 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25) R 6.94 /W c th(ch-c) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 65.7 /W th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 4) R 178 /W th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 48 V, T = 25 (initial), L = 0.2 mH, I = 9 A DD ch AR Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-01-07 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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