TTB1020B,S4X(S Toshiba

TTB1020B Bipolar Transistors Silicon PNP Triple-Diffused Type TTB1020BTTB1020BTTB1020BTTB1020B 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Current Switching Hammer Drivers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) High DC current gain: h = 2000 (min) (V = -3 V , I = -3 A) FE CE C (2) Low collector-emitter saturation voltage: V = -1.5 V (max) (I = -3 A , I = -6 mA) CE(sat) C B (3) Complementary to TTD1415B 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1. Base 2. Collector 3. Emitter TO-220SIS Start of commercial production 2012-09 2015 Toshiba Corporation 2015-08-06 1 Rev.3.0TTB1020B 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Collector-base voltage V -100 V CBO Collector-emitter voltage V -100 CEO Emitter-base voltage V -5 EBO Collector current (DC) (Note 1) I -7 A C Collector current (pulsed) (Note 1) I -10 CP Base current I -0.7 B Collector power dissipation P 2 W C Collector power dissipation (T = 25 ) P 30 c C Junction temperature T 150 j Storage temperature T -55 to 150 stg Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 . 5. 5. Electrical CharacteristicsElectrical Characteristics 5. 5. Electrical CharacteristicsElectrical Characteristics 5.1. 5.1. 5.1. 5.1. Static Characteristics (TStatic Characteristics (TStatic Characteristics (TStatic Characteristics (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = -100 V, I = 0 A -2 A CBO CB E Emitter cut-off current I V = -5 V, I = 0 A -2.8 mA EBO EB C Collector-emitter breakdown voltage V I = -50 mA, I = 0 A -100 V (BR)CEO C B DC current gain h V = -3 V, I = -3 A 2000 15000 FE(1) CE C h V = -3 V, I = -7 A 1000 FE(2) CE C Collector-emitter saturation voltage V (1) I = -3 A, I = -6 mA -0.95 -1.5 V CE(sat) C B Collector-emitter saturation voltage V (2) I = -7 A, I = -14 mA -1.3 -2.0 V CE(sat) C B Base-emitter saturation voltage V I = -3 A, I = -6 mA -1.55 -2.0 V BE(sat) C B 2015 Toshiba Corporation 2015-08-06 2 Rev.3.0