X-On Electronics has gained recognition as a prominent supplier of TP65H035G4WS MOSFETs across the USA, India, Europe, Australia, and various other global locations. TP65H035G4WS MOSFETs are a product manufactured by Transphorm. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TP65H035G4WS Transphorm

TP65H035G4WS electronic component of Transphorm
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See Product Specifications
Part No.TP65H035G4WS
Manufacturer: Transphorm
Category: MOSFETs
Description: MOSFET GAN FET 650V 46.5A TO247
Datasheet: TP65H035G4WS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 17.1695 ea
Line Total: USD 17.17 
Availability - 497
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
497
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 17.1695
30 : USD 12.6385
120 : USD 12.1555

   
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We are delighted to provide the TP65H035G4WS from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TP65H035G4WS and other electronic components in the MOSFETs category and beyond.

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TP65H035G4WS 650V SuperGaN FET in TO-247 (source tab) Description Features The TP65H035G4WS 650V, 35 m gallium nitride (GaN) JEDEC qualified GaN technology FET is a normally-off device using Transphorms Gen IV Dynamic RDS(on)eff production tested platform. It combines a state-of-the-art high voltage GaN Robust design, defined by HEMT with a low voltage silicon MOSFET to offer superior Wide gate safety margin reliability and performance. Transient over-voltage capability Enhanced inrush current capability The Gen IV SuperGaN platform uses advanced epi and Very low Q RR patented design technologies to simplify manufacturability Reduced crossover loss while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery Benefits charge. Enables AC-DC bridgeless totem-pole PFC designs Increased power density Related Literature Reduced system size and weight AN0009: Recommended External Circuitry for GaN FETs Overall lower system cost AN0003: Printed Circuit Board Layout and Probing Achieves increased efficiency in both hard- and soft- switched circuits Easy to drive with commonly-used gate drivers Ordering Information GSD pin layout improves high speed design Package Part Number Package Configuration Applications Datacom TP65H035G4WS 3 lead TO-247 Source Broad industrial PV inverter TP65H035G4WS Servo motor TO-247 (top view) S Key Specifications V (V) 650 DSS V (V) 800 DSS(TR) R (m) max* 41 DS(on)eff Q (nC) typ 150 RR G S D Q (nC) typ 22 G * Dynamic on-resistance see Figures 19 and 20 Cascode Schematic Symbol Cascode Device Structure Apr. 22, 2021 2019 Transphorm Inc. Subject to change without notice. tp65h035G4ws.3v1 1 TP65H035G4WS Absolute Maximum Ratings (T =25C unless otherwise stated.) c Symbol Parameter Limit Value Unit VDSS Drain to source voltage (TJ = -55C to 150C) 650 a V Transient drain to source voltage 800 V DSS(TR) V Gate to source voltage 20 GSS P Maximum power dissipation T =25C 156 W D C b Continuous drain current T =25C 46.5 A C I D b Continuous drain current TC=100C 29.5 A I Pulsed drain current (pulse width: 10s) 240 A DM TC Case -55 to +150 C Operating temperature T Junction -55 to +150 C J TS Storage temperature -55 to +150 C c TSOLD Soldering peak temperature 260 C Notes: a. In off-state, spike duty cycle D<0.01, spike duration <30s, none repetitive. b. For increased stability at high current operation, see Circuit Implementation on page 3 c. For 10 sec., 1.6mm from the case Thermal Resistance Symbol Parameter Max Unit R Junction-to-case 0.8 C/W JC RJA Junction-to-ambient 40 C/W Apr. 22, 2021 transphormusa.com tp65h035G4ws.3v1 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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