TP65H035G4WS 650V SuperGaN FET in TO-247 (source tab) Description Features The TP65H035G4WS 650V, 35 m gallium nitride (GaN) JEDEC qualified GaN technology FET is a normally-off device using Transphorms Gen IV Dynamic RDS(on)eff production tested platform. It combines a state-of-the-art high voltage GaN Robust design, defined by HEMT with a low voltage silicon MOSFET to offer superior Wide gate safety margin reliability and performance. Transient over-voltage capability Enhanced inrush current capability The Gen IV SuperGaN platform uses advanced epi and Very low Q RR patented design technologies to simplify manufacturability Reduced crossover loss while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery Benefits charge. Enables AC-DC bridgeless totem-pole PFC designs Increased power density Related Literature Reduced system size and weight AN0009: Recommended External Circuitry for GaN FETs Overall lower system cost AN0003: Printed Circuit Board Layout and Probing Achieves increased efficiency in both hard- and soft- switched circuits Easy to drive with commonly-used gate drivers Ordering Information GSD pin layout improves high speed design Package Part Number Package Configuration Applications Datacom TP65H035G4WS 3 lead TO-247 Source Broad industrial PV inverter TP65H035G4WS Servo motor TO-247 (top view) S Key Specifications V (V) 650 DSS V (V) 800 DSS(TR) R (m) max* 41 DS(on)eff Q (nC) typ 150 RR G S D Q (nC) typ 22 G * Dynamic on-resistance see Figures 19 and 20 Cascode Schematic Symbol Cascode Device Structure Apr. 22, 2021 2019 Transphorm Inc. Subject to change without notice. tp65h035G4ws.3v1 1 TP65H035G4WS Absolute Maximum Ratings (T =25C unless otherwise stated.) c Symbol Parameter Limit Value Unit VDSS Drain to source voltage (TJ = -55C to 150C) 650 a V Transient drain to source voltage 800 V DSS(TR) V Gate to source voltage 20 GSS P Maximum power dissipation T =25C 156 W D C b Continuous drain current T =25C 46.5 A C I D b Continuous drain current TC=100C 29.5 A I Pulsed drain current (pulse width: 10s) 240 A DM TC Case -55 to +150 C Operating temperature T Junction -55 to +150 C J TS Storage temperature -55 to +150 C c TSOLD Soldering peak temperature 260 C Notes: a. In off-state, spike duty cycle D<0.01, spike duration <30s, none repetitive. b. For increased stability at high current operation, see Circuit Implementation on page 3 c. For 10 sec., 1.6mm from the case Thermal Resistance Symbol Parameter Max Unit R Junction-to-case 0.8 C/W JC RJA Junction-to-ambient 40 C/W Apr. 22, 2021 transphormusa.com tp65h035G4ws.3v1 2