TP65H480G4JSG 650V SuperGaN GaN FET in PQFN (source tab) Description Features The TP65H480G4JSG 650V, 480m Gallium Nitride (GaN) Gen IV technology FET is a normally-off device using Transphorms Gen IV JEDEC-qualified GaN technology platform. It combines a state-of-the-art high voltage GaN Dynamic R production tested DS(on)eff HEMT with a low voltage silicon MOSFET to offer superior Robust design, defined by reliability and performance. Wide gate safety margin Transient over-voltage capability The Gen IV SuperGaN platform uses advanced epi and Very low Q RR patented design technologies to simplify manufacturability Reduced crossover loss while improving efficiency over silicon via lower gate charge, RoHS compliant and Halogen-free packaging output capacitance, crossover loss, and reverse recovery charge. Benefits Achieves increased efficiency in both hard- and soft- Related Literature switched circuits AN0003: Printed Circuit Board Layout and Probing Increased power density AN0007: Recommendations for Vapor Phase Reflow Reduced system size and weight AN0009: Recommended External Circuitry for GaN FETs Overall lower system cost AN0012: PQFN Tape and Reel Information Easy to drive with commonly-used gate drivers GSD pin layout improves high speed design Product Series and Ordering Information Applications Package Part Number Package Configuration Consumer Power adapters TP65H480G4JSG-TR* 5x6 PQFN Source Low power SMPS * -TR suffix refers to tape and reel. Refer to AN0012 for details. Lighting TP65H480G4JSG PQFN (top view) Key Specifications V (V) 650 DS S V (V) 800 DSS(TR) RDS(on) (m) max* 560 D Q (nC) typ 14 RR G QG (nC) typ 9 * Dynamic RDS(on) see Figures 18 and 19 Cascode Schematic Symbol Cascode Device Structure Mar. 2, 2021 2019 Transphorm Inc. Subject to change without notice. tp65h480g4lsg.3v1 1 TP65H480G4JSG Absolute Maximum Ratings (T =25C unless otherwise stated.) c Symbol Parameter Limit Value Unit VDSS Drain to source voltage (TJ = -55C to 150C) 650 a VDSS (TR) Transient drain to source voltage 800 V V Gate to source voltage 18 GSS P Maximum power dissipation T =25C 13.2 W D C b Continuous drain current T =25C 3.6 A C I D b Continuous drain current T =100C 2.3 A C IDM Pulsed drain current (pulse width: 10s) 17 A TC Case -55 to +150 C Operating temperature T Junction -55 to +150 C J T Storage temperature -55 to +150 C S c T Reflow soldering temperature 260 C SOLD Notes: a. In off-state, spike duty cycle D<0.01, spike duration <30s. b. For increased stability at high current operation, see Circuit Implementation on page 3 c. Reflow MSL3 Thermal Resistance Symbol Parameter Maximum Unit R Junction-to-case 9.5 C/W JC d R Junction-to-ambient 50 C/W JA Notes: 2 d. Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm copper area and 70m thickness) Mar. 2, 2021 transphormusa.com tp65h480g4lsg.3v1 2