TP65H300G4LSG 650V SuperGaN FET in PQFN (source tab) Description Features The TP65H300G4LSG 650V, 240 m gallium nitride (GaN) JEDEC-qualified GaN technology FET is a normally-off device using Transphorms Gen IV Dynamic RDS(on) production tested platform. It combines a state-of-the-art high voltage GaN Robust design, defined by HEMT with a low voltage silicon MOSFET to offer superior Intrinsic lifetime tests reliability and performance. Wide gate safety margin Transient over-voltage capability The Gen IV SuperGaN platform uses advanced epi and Enhanced inrush current capability patented design technologies to simplify manufacturability Very low Q RR while improving efficiency over silicon via lower gate charge, Reduced crossover loss output capacitance, crossover loss, and reverse recovery charge. Benefits Related Literature Enables AC-DC bridgeless totem-pole PFC designs AN0003: Printed Circuit Board Layout and Probing Increased power density AN0007: Recommendations for Vapor Phase Reflow Reduced system size and weight AN0009: Recommended External Circuitry for GaN FETs Overall lower system cost AN0012: PQFN Tape and Reel Information Achieves increased efficiency in both hard- and soft- switched circuits Easy to drive with commonly-used gate drivers GSD pin layout improves high speed design Applications Product Series and Ordering Information Consumer Package Part Number Package Power adapters Configuration Low power SMPS TP65H300G4LSG-TR* 8x8 PQFN Source Lighting * -TR suffix refers to tape and reel. Refer to AN0012 for details. Key Specifications TP65H300G4LSG V (V) 650 DSS PQFN (top view) V (V) 800 DSS(TR) S R (m) max* 312 DS(on) QRR (nC) typ 23 QG (nC) typ 9.6 D * Dynamic RDS(on) see Figures 18 and 19 G Cascode Schematic Symbol Cascode Device Structure Mar. 2, 2021 2021 Transphorm Inc. Subject to change without notice. tp65h300g4lsg.2v1 1 TP65H300G4LSG Absolute Maximum Ratings (T =25C unless otherwise stated.) c Symbol Parameter Limit Value Unit VDSS Drain to source voltage (TJ = -55C to 150C) 650 a VDSS (TR) Transient drain to source voltage 800 V V Gate to source voltage 18 GSS P Maximum power dissipation T =25C 21 W D C b Continuous drain current T =25C 6.5 A C I D b Continuous drain current T =100C 4.1 A C IDM Pulsed drain current (pulse width: 10s) 30 A TC Case -55 to +150 C Operating temperature T Junction -55 to +150 C J T Storage temperature -55 to +150 C S c T Reflow soldering temperature 260 C SOLD Notes: a. In off-state, spike duty cycle D<0.01, spike duration <30s. b. For increased stability at high current operation, see Circuit Implementation on page 3 c. Reflow MSL3 Thermal Resistance Symbol Parameter Typical Unit R Junction-to-case 5.5 C/W JC d R Junction-to-ambient 50 C/W JA Notes: 2 d. Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm copper area and 70m thickness) Mar. 2, 2021 transphormusa.com tp65h300g4lsg.2v1 2