X-On Electronics has gained recognition as a prominent supplier of TP65H300G4LSG MOSFETs across the USA, India, Europe, Australia, and various other global locations. TP65H300G4LSG MOSFETs are a product manufactured by Transphorm. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TP65H300G4LSG Transphorm

TP65H300G4LSG electronic component of Transphorm
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See Product Specifications
Part No.TP65H300G4LSG
Manufacturer: Transphorm
Category: MOSFETs
Description: MOSFET GAN FET 650V 6.5A PQFN88
Datasheet: TP65H300G4LSG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.9474 ea
Line Total: USD 7.95 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 7.9474
10 : USD 2.8862
25 : USD 2.7188
50 : USD 2.6352
100 : USD 2.3424
250 : USD 2.2169
500 : USD 2.0705
1000 : USD 1.8823
2500 : USD 1.8823

   
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We are delighted to provide the TP65H300G4LSG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TP65H300G4LSG and other electronic components in the MOSFETs category and beyond.

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TP65H300G4LSG 650V SuperGaN FET in PQFN (source tab) Description Features The TP65H300G4LSG 650V, 240 m gallium nitride (GaN) JEDEC-qualified GaN technology FET is a normally-off device using Transphorms Gen IV Dynamic RDS(on) production tested platform. It combines a state-of-the-art high voltage GaN Robust design, defined by HEMT with a low voltage silicon MOSFET to offer superior Intrinsic lifetime tests reliability and performance. Wide gate safety margin Transient over-voltage capability The Gen IV SuperGaN platform uses advanced epi and Enhanced inrush current capability patented design technologies to simplify manufacturability Very low Q RR while improving efficiency over silicon via lower gate charge, Reduced crossover loss output capacitance, crossover loss, and reverse recovery charge. Benefits Related Literature Enables AC-DC bridgeless totem-pole PFC designs AN0003: Printed Circuit Board Layout and Probing Increased power density AN0007: Recommendations for Vapor Phase Reflow Reduced system size and weight AN0009: Recommended External Circuitry for GaN FETs Overall lower system cost AN0012: PQFN Tape and Reel Information Achieves increased efficiency in both hard- and soft- switched circuits Easy to drive with commonly-used gate drivers GSD pin layout improves high speed design Applications Product Series and Ordering Information Consumer Package Part Number Package Power adapters Configuration Low power SMPS TP65H300G4LSG-TR* 8x8 PQFN Source Lighting * -TR suffix refers to tape and reel. Refer to AN0012 for details. Key Specifications TP65H300G4LSG V (V) 650 DSS PQFN (top view) V (V) 800 DSS(TR) S R (m) max* 312 DS(on) QRR (nC) typ 23 QG (nC) typ 9.6 D * Dynamic RDS(on) see Figures 18 and 19 G Cascode Schematic Symbol Cascode Device Structure Mar. 2, 2021 2021 Transphorm Inc. Subject to change without notice. tp65h300g4lsg.2v1 1 TP65H300G4LSG Absolute Maximum Ratings (T =25C unless otherwise stated.) c Symbol Parameter Limit Value Unit VDSS Drain to source voltage (TJ = -55C to 150C) 650 a VDSS (TR) Transient drain to source voltage 800 V V Gate to source voltage 18 GSS P Maximum power dissipation T =25C 21 W D C b Continuous drain current T =25C 6.5 A C I D b Continuous drain current T =100C 4.1 A C IDM Pulsed drain current (pulse width: 10s) 30 A TC Case -55 to +150 C Operating temperature T Junction -55 to +150 C J T Storage temperature -55 to +150 C S c T Reflow soldering temperature 260 C SOLD Notes: a. In off-state, spike duty cycle D<0.01, spike duration <30s. b. For increased stability at high current operation, see Circuit Implementation on page 3 c. Reflow MSL3 Thermal Resistance Symbol Parameter Typical Unit R Junction-to-case 5.5 C/W JC d R Junction-to-ambient 50 C/W JA Notes: 2 d. Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm copper area and 70m thickness) Mar. 2, 2021 transphormusa.com tp65h300g4lsg.2v1 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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