TP90H050WS 900V Cascode GaN FET in TO-247 (source tab) Description Features The TP90H050WS 900V, 50m Gallium Nitride (GaN) FET JEDEC qualified GaN technology is a normally-off device. It combines state-of-the-art high Dynamic RDS(on)eff production tested voltage GaN HEMT and low voltage silicon MOSFET Robust design, defined by technologiesoffering superior reliability and performance. Intrinsic lifetime tests Wide gate safety margin Transphorm GaN offers improved efficiency over silicon, Transient over-voltage capability through lower gate charge, lower crossover loss, and smaller Very low Q RR reverse recovery charge. Reduced crossover loss RoHS compliant and Halogen-free packaging Related Literature AN0009: Recommended External Circuitry for GaN FETs Benefits AN0003: Printed Circuit Board Layout and Probing Enables AC-DC bridgeless totem-pole PFC designs AN0010: Paralleling GaN FETs Increased power density Reduced system size and weight Overall lower system cost Achieves increased efficiency in both hard- and soft- Ordering Information switched circuits Package Easy to drive with commonly-used gate drivers Part Number Package Configuration GSD pin layout improves high speed design TP90H050WS 3 lead TO-247 Source Applications Datacom TP90H050WS Broad industrial TO-247 PV inverter (top view) Servo motor S Key Specifications V (V) 900 DS V (V) max 1000 (TR)DSS R (m) max* 63 DS(on)eff G Q (nC) typ 156 S RR D Q (nC) typ 15 G * Reflects both static and dynamic on-resistance see Figures 18 and 19 Cascode Schematic Symbol Cascode Device Structure July 7, 2020 2017 Transphorm Inc. Subject to change without notice. tp90h050ws.1 1 TP90H050WS Absolute Maximum Ratings (T =25C unless otherwise stated. All recommended current levels (I ) are J DM based on adequate heat sinking, ensuring T =150C ) J Symbol Parameter Limit Value Unit a Continuous drain current TC=25C 34 A I D a Continuous drain current T =100C 22 A C IDM Pulsed drain current (pulse width: 10s) 150 A b di/dt Reverse diode di/dt, repetitive 1600 A/s RDMC c I Reverse diode switching current, repetitive (dc) 24 A RDMC1 c I Reverse diode switching current, repetitive (ac) 28 A RDMC2 d di/dt Reverse diode di/dt, transient 3000 A/s RDMT IRDMT Reverse diode switching current, transient 36 A e V Transient drain to source voltage 1000 V (TR)DSS V Gate to source voltage 20 V GSS P Maximum power dissipation T =25C 119 W D C TC Case -55 to +150 C Operating temperature TJ Junction -55 to +150 C T Storage temperature -55 to +150 C S f T Soldering peak temperature 260 C SOLD - Mounting Torque 80 N cm Notes: a. For increased stability at high current operation, see Circuit Implementation on page 3 b. Continuous switching operation c. Definitions: dc = dc to dc converter topologies ac = inverter and PFC topologies, 50-60Hz line frequency d. 300 pulses in 1 second e. In off-state, spike duty cycle D<0.01, spike duration <1s f. For 10 sec., 1.6mm from the case Thermal Resistance Symbol Parameter Typical Unit RJC Junction-to-case 1.05 C/W R Junction-to-ambient 40 C/W JA July 7, 2020 transphormusa.com tp90h050ws.1 2