2N6796 TT Electronics

N-CHANNEL POWER MOSFET 2N6796 MOSFET Transistor in a Hermetic Metal TO-205AF Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications High Reliability and Screening Options Available ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) C V Drain - Source Voltage 100V DS V Gate - Source Voltage 20V GS I Continuous Drain Current T = 25C 7.2A D C I Continuous Drain Current T = 100C 4.6A D C (1) I Pulsed Drain Current 32A DM P Total Power Dissipation T = 25C 20.833W D C Derate Above 25C 0.167W/C T Junction Temperature Range -55 to +150C J T Storage Temperature Range -55 to +150C stg THERMAL PROPERTIES Symbols Parameters Max. Units R Thermal Resistance, Junction To Case 6 C/W JC Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width 380s, 2% (3) By Design Only, Not A Production Test. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that Semelab datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number: DOC 3095 Issue: 2 Telephone: +44 (0) 1455 556565 Email: lutterworth.sales ttelectronics.com Website: N-CHANNEL POWER MOSFET 2N6796 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) C Symbols Parameters Test Conditions Min. Typ. Max. Units Drain - Source Breakdown V V = 0 I = 0.25mA 100 V (BR)DSS GS D Voltage V V = V I = 0.25mA Gate Threshold Voltage 2.0 4.0 V GS(th) DS GS D I V = 0 V = 20V Gate - Source Leakage 100 nA GSS DS GS V = 0 V = 0.8BV 250 GS DS DSS Zero Gate Voltage Drain I A DSS Current T = 125C 1000 A V = 10V I = 4.6A 0.18 GS D (2) Static Drain - Source On - R T = 125C 0.35 DS(on) A State Resistance V = 10V I = 7.2A 0.207 GS D V V = 10V I = 7.2A Drain-Source On-Voltage 1.5 V DS(on) GS D (2) g V = 15V I = 4.6A Forward Transconductance 3 S() fs GS D DYNAMIC CHARACTERISTICS (T = 25C unless otherwise stated) C C Input Capacitance 683 iss V = 25V DS C Output Capacitance 165 oss V = 0V pF GS Reverse Transfer C f = 1.0MHz 84 rss Capacitance t Turn-On Delay Time 30 d(on) V = 50V DD t Rise Time 75 r I = 7.2A ns D t Turn-Off Delay Time 40 d(off) R = 7.5 G t Fall Time 45 f SOURCE-DRAIN DIODE CHARACTERISTICS I = 7.2A V = 0 S GS (3) t Reverse Recovery Time 300 ns rr di/dt 100A/s VDD 50V Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Telephone: +44 (0) 1455 556565 Email: lutterworth.sales ttelectronics.com Website: