Surface Mount Optically Coupled Isolator 4N22U, 4N23U, 4N24U (COTS, TX, TXV) 4N47U, 4N48U, 4N49U (COTS, TX, TXV) Features: Surface Mount (SM), Leadless Chip Carrier (LCC) 1 kV electrical isolation Base contact provided for conventional transistor biasing TX and TXV devices processed to MIL-PRF-19500 Description: Each isolator in this series has a 890 nm (for the 4N2 U series) and 935nm (for the 4N4 series) wavelength infrared emitting diode and a NPN silicon phototransistor, which are mounted in a hermetically sealed Surface Mount, 6 Pin package. Devices are designed for military and/or harsh environments. Burn-in condition is V = CE 10V, I = 40mA, P = 275 mW, T = 25 C. F D A The 4N22U, 4N23U and 4N24U (TX, TXV) devices are processed to MIL-PRF-19500/486. The 4N47U, 4N48U and 4N48U (TX, TXV) devices are processed to MIL-PRF-19500/548. Please contact your local representative or OPTEK for more information. Ordering Information Applications: V Processing CE Part LED Peak Isolation CTR % I (mA) F Sensor (Volts) MIL-PRF- Military equipment Number Wavelength Voltage (kV) Minimum Typ / Max Max 195000 High-Reliability environments 4N22U COTS High voltage isolation between input and output 4N22UTX 25 Electrical isolation in dirty 486 environments 4N22UTXV Industrial equipment 4N23U COTS Medical equipment 4N23UTX 890 nm 60 35 Office equipment 486 4N23UTXV 4N24U COTS 4N24UTX 100 486 4N24UTXV Transistor 1 10 / 40 4N47U COTS 4N47UTX 50 548 4N47UTXV 4N48U COTS 4N48UTX 935 nm 100 45 548 4N48UTXV 4N49U COTS 4N49UTX 200 548 4N49UTXV OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue A .1 03/09 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 5 Surface Mount Optically Coupled Isolator 4N22U, 4N23U, 4N24U (COTS, TX, TXV) 4N47U, 4N48U, 4N49U (COTS, TX, TXV) o Absolute Maximum Ratings (T = 25 C unless otherwise noted) A Storage Temperature -65 C to +150 C Operating Temperature -55 C to +125 C (1)(2) Input-to-Output Isolation Voltage 1 kVDC (3) Lead Soldering Temperature (1/16 (1.6 mm) from case for 5 seconds with soldering iron) 260 C Input Diode (4) Forward DC Current 50 mA Reverse DC Voltage 2 V (5) Power Dissipation 300 mW Output Photosensor Collector-Emitter Voltage 35 V Emitter-Collector Voltage 7.0 V (6) Power Dissipation 100 mW Collector Current vs Forward Current vs Temperature Forward Voltage vs Forward Current vs Temperature 1.5 1.6 Normalized at +25C and I = 20 F 1.4 1.4 1.2 1.3 1.0 1.2 0.8 -55 -35 1.1 -15 0.6 -55 +5 -35 1.0 +25 -15 0.4 +5 +45 +25 +65 +45 0.9 +85 +65 0.2 +85 +105 +105 +125 +125 0.0 0.8 0 5 10 15 20 25 0 5 10 15 20 25 I - Forward current (mA) I - Forward Current (mA) F F OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.1 03/09 OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 5 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com V - Forward Voltage (V) F Normalized - I - Collector Current (mA) C(ON)
