Hi-Reliability Optically Coupled Isolator 4N22, 4N23, 4N24 A (TX, TXV) 4N47, 4N48, 4N49 A (TX, TXV) Features: TO-78 hermetically sealed package High current transfer ratio 1 kV electrical isolation Base contact provided for conventional transistor biasing TX and TXV devices processed to MIL-PRF-19500 Description: Each isolator in this series consists of an infrared emitting diode and a NPN silicon phototransistor, which are mounted in a hermetically sealed TO -78 package. Devices are designed for military and/or harsh environments. The suffix letter A denotes the collector is electrically isolated from the case. The 4N22, 4N22A, 4N23, 4N23A,4N24, and 4N24A (TX, TXV) devices are processed to MIL-PRF-19500/486. The 4N47, 4N47A, 4N48, 4N48A, 4N49, and 4N49A (TX, TXV) devices are processed to MIL-PRF-19500/548. Please contact your local representative or OPTEK for more information. Applications: High-voltage isolation between input Ordering Information and output Isolation V Processing CE Part CTR % I (mA) F Electrical isolation in dirty Voltage (Volts) MIL-PRF- Number Min / Max Typ / Max environments (kV) Max 195000 Industrial equipment 4N22 or 4N22A Medical equipment 4N22TX or 4N22ATX 25 / NA Office equipment 4N22TXV or 4N22ATXV 4N23 or 4N23A 4N23TX or 4N23ATX 20 / NA 10 / 40 35 486 4N23TXV or 4N23ATXV 4N24 or 4N24A 4N24TX or 4N24ATX 40 / NA 4N24TXV or 4N24ATXV 1 4N47 or 4N47A 4N47TX or 4N47ATX 50 / NA 4N47TXV or 4N47ATXV 4N48 or 4N48A 4N48TX or 4N48ATX 100 / 500 1 / 40 40 548 548 4N48TXV or 4N48ATXV 4N49 or 4N49A 200 / 4N49TX or 4N49ATX 1,000 4N49TXV or 4N49ATXV General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.optekinc.com www.ttelectronics.com considered accurate at time of going to print. Issue E 08/2019 Page 1 TT electronics plc Hi-Reliability Optically Coupled Isolator 4N22, 4N23, 4N24 A (TX, TXV) 4N47, 4N48, 4N49 A (TX, TXV) Absolute Maximum Ratings (T = 25 C unless otherwise noted) A Storage Temperature Range 4N22, 4N22A, 4N23, 4N23A, 4N24, 4N24A (TX, TXV) -65 C to +125 C 4N47, 4N47A, 4N48, 4N48A, 4N49, 4N49A (TX, TXV) Operating Temperature Range 4N22, 4N22A, 4N23, 4N23A, 4N24, 4N24A (TX, TXV) -55 C to +125 C 4N47, 4N47A, 4N48, 4N48A, 4N49, 4N49A (TX, TXV) (1) Input-to-Output Isolation Voltage 1.00 kVDC (2) Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260 C Input Diode Forward DC Current (65 C or below) 40 mA Reverse Voltage 2 V Peak Forward Current (1 s pulse width, 300 pps) 1 A 4N22, 4N22A, 4N23, 4N23A, 4N24, 4N24A (TX, TXV) (3) Power Dissipation 60 mW Output Phototransistor (4N22, 4N22A, 4N23, 4N23A, 4N24, 4N24A ) Continuous Collector Current 50 mA Collector-Emitter Voltage 35 V Collector-Base Voltage 35 V Emitter -Base Voltage 4 V (4) Power Dissipation 300 mW Output Phototransistor (4N47, 4N47A, 4N48, 4N48A, 4N49, 4N49A ) Continuous Collector Current 50 mA Collector-Emitter Voltage 40 V Collector-Base Voltage 45 V Emitter -Base Voltage 7.0 V (4) Power Dissipation 300 mW Notes: 1. Measured with input leads shorted together and output leads shorted together. 2. RMA flux is recommended. Duration can be extended to 10 seconds maximum when ofl w soldering. 3. Derate linearly 1.0 mW/ C above 65 C. 4. Derate linearly 3.0 mW/ C above 25 C. General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.optekinc.com www.ttelectronics.com considered accurate at time of going to print. Issue E 08/2019 Page 2 TT electronics plc