Prod uct Bul le tin OP906 June 1996 PIN Sili con Pho to di ode Type OP906 o Fea tures Ab so lute Maxi mum Rat ings (T = 25 C un less oth er wise noted) A Re verse Break down Volt age . 60 V Narrow receiving angle o o Stor age and Op er at ing Tem pera ture Range -40 C to +100 C Linear response vs irradiance Lead Sol der ing Tem pera ture 1/16 inch (1.6 mm) from case for 5 sec. with sol der ing Fast switching time o (1) iron 260 C T-1 package style (2) Power Dis si pa tion 100 mW Small package ideal for space limited Notes: applications (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. o o De scrip tion (2) Derate linearly 1.67 mW/ C above 25 C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a The OP906 device consists of a PIN radiometric intensity level which varies less than 10% over the entire lens surface of the photodiode being tested. silicon photodiode molded in a clear (0.042 T -1.5) (4) To calculate typical dark current in nA, use the formula I = 10 A where T is D A epoxy package which allows spectral o ambient temperature in C. response from visible to infrared light wavelengths. The narrow receiving angle Typi cal Per form ance Curves provides excellent on-axis coupling. These devices are 100% production tested using infrared light for close Coupling Characteristics correlation with Opteks GaAs and Relative Response vs. Wavelength OP906 and OP266 GaAlAs emitters. Lead spacing is 0.100 inch (2.54 mm). VR = 5 V I = 20 mA F Dis tance Be tween Lens Tips -inches - Wave length - nm Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 3-54Type OP906 o Elec tri cal Char ac ter is tics (T = 25 C un less oth er wise noted) A SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS 2(3) IL Reverse Light Current 16 35 A VR = 5 V, Ee = 0.50 mW/cm I Reverse Dark Current 1 60 nA V = 30 V, E = 0 D R e V Reverse Breakdown Voltage 60 V I = 100 A (BR)R R V Forward Voltage 1.2 V I = 1 mA F F C Total Capacitance 4 pF V = 20 V, E = 0, f = 1.0 MHz T R e t , t Rise Time, Fall Time 5 ns V = 20 V, = 850 nm, R = 50 r f R L Typi cal Per form ance Curves Normalized Light Current vs Total Capacitance vs Normalized Light and Dark Reverse Voltage Reverse Voltage Current vs Ambient Temperature V = 5 V R = 935 nm Normalized to o o T = 25 C A T = 25 C A 2 E = 0 mW/cm e f = 1 MHz Light Current o T = 25 C A = 935 nm Normalized to V = 5 V R Dark Current o T - Ambient Temperature - C A V - Reverse Voltage - V V - Reverse Voltage - V R R Light Current vs. Irradiance Switching Time Test Circuit Light Current vs. Angular Displacement V = 5 V R o T = 25 C A = 935 nm Test Conditions: = 935 nm VR = 5 V Distance Lens to Lens = 1.5 inches 2 E - Irradiance - mW/cm e - Angular Displacement - Deg. Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396 3-55