OPB711 TT Electronics

Reflective Object Sensor OPB711, OPB712 Features: Choice of phototransistor or photodarlington output Unfocused for sensing diffuse surface Product Photo Here Low-cost plastic housing Choice of filter or unfiltered Description: OPB711 consists of an infrared emitting diode and an NPN silicon phototransistor, mounted side-by-side on parallel axes in a black opaque plastic housing. The OPB712 consists of an infrared emitting diode and an NPN silicon photodarlington, mounted side-by-side on parallel axes in a black plastic housing. OPB711s, emitting diode and phototransistor are encapsulated in a filtering epoxy to reduce ambient light noise. Its phototransistor responds to radiation from the emitter only when a reflective object passes within its field of view. OPB712s emitting diode and photodarlington are encapsulated in a filtering epoxy to reduce ambient light noise. Its photodarlington responds to radiation from the emitter only when a reflective object passes within its field of view. Applications: Reflection Non-contact reflective object sensor Part LED Peak Distance Lead Length / Assembly line automation Number Wavelength Sensor Inch (mm) Spacing Machine automation 0.30 / OPB711 Transistor Machine safety 890 nm 0.080 (2.03mm) 0.095 & 0.100 End of travel sensor OPB712 Darlington X = 0.06 (1.5 mm) Door sensor OPB711 1 3 2 4 OPB712 MILLIMETERS 1 3 DIMENSIONS ARE IN: INCHES Pin LED Pin Transistor 1 Anode 3 Collector 2 Cathode 4 Emitter 2 4 OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue A .1 12/06 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 5 Reflective Object Sensor OPB711, OPB712 Absolute Maximum Ratings (T =25C unless otherwise noted) A Storage & Operating Temperature Range -40 C to +85 C (1) Lead Soldering Temperature 1/16 inch (1.6mm) from the case for 5 sec. with soldering iron 260 C Input Diode (See OP268 for additional informationfor reference only) Forward DC Current 50 mA Peak Forward Current (1 s pulse width, 300 pps) 3 A Reverse DC Voltage 2 V (2) Power Dissipation 80 mW Output Phototransistor (OPB711), Output Photodarlington (OPB712) Collector-Emitter Voltage OPB711 24 V OPB712 15 V Emitter-Collector Voltage 5 V Collector DC Current OPB711 25 mA OPB712 125 mA Power Dissipation (2) OPB711 80 mW (3) OPB712 125 mW Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2 (2) Derate linearly 1.33 mW/cm above 25 C. o o (3) Derate linearly 2.08 mW/ C above 25 C. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.1 12/06 OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 5 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com