X-On Electronics has gained recognition as a prominent supplier of UT2301G-AE3-R MOSFETs across the USA, India, Europe, Australia, and various other global locations. UT2301G-AE3-R MOSFETs are a product manufactured by Unisonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

UT2301G-AE3-R Unisonic

Name: UT2301G-AE3-R
Brand: Unisonic
SKU: UT2301GAE3R_Unisonic
Availability: InStock
Rating: 5 (11 reviews)

UT2301G-AE3-R electronic component of Unisonic

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See Product Specifications

Part No.	UT2301G-AE3-R
Manufacturer:	Unisonic
Category:	MOSFETs
Description:	MOSFET P Trench 20V 2.8A 450mV @ 250uA 130 mÎ© @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
Datasheet:	UT2301G-AE3-R Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0707 ea
Line Total: USD 0.71

Availability - 911
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 10 Multiples: 10
Pack Size: 10

UT2301G-AE3-R More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

911

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 10
Multiples : 10

10 : USD 0.0707
100 : USD 0.0576
300 : USD 0.051
3000 : USD 0.0451
6000 : USD 0.0413
9000 : USD 0.0393

Specifications

Manufacturer
Unisonic Unisonic

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category
Unisonic Unisonic

Fet Type
p trench p trench

Drain To Source Voltagevdss
20 V 20 V

Continuous Drain Current Id @ 25°C
2.8 A 2.8 A

Vgsth Max @ Id
450mv @ 250ua 450mv @ 250ua

Rds On Max @ Id Vgs
130 m @ 2.8a,4.5v 130 m @ 2.8a,4.5v

Power Dissipation-Max Ta
1.14 W 1.14 W

Drain Source Voltage Vdss
20 V 20 V

Continuous Drain Current Id
2.8 A 2.8 A

Drain Source On Resistance Rdson@Vgs Id
130 mOhms @4.5V , 2.8A 130 mOhms @4.5V , 2.8A

Power Dissipation Pd
1.14 W 1.14 W

Gate Threshold Voltage Vgsth@Id
450 mV @250uA 450 mV @250uA

Type
P Channel P Channel

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We are delighted to provide the UT2301G-AE3-R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UT2301G-AE3-R and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The UT2301G-AE3-R is a single N-Channel Enhancement Mode MOSFET manufactured by Unisonic. It is packaged in a SOT-23-3 (small outline transistor) form factor and is compliant with RoHS regulations. This device features a P-Trench because the N-Channel is in the form of a shallow trench. Its rated voltage is 20V and its rated current is 2.8A. This device has an operating voltage of 450mV @ 250uA and a gate threshold voltage of 4.5V. Additionally, its RDS(on) is 130mÎ© @ 2.8A.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic Tech may also be referenced as

UTC(Unisonic Tech)

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Availability	Price	Buy Price	Quantity
911 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 10 Multiples : 10	10 : USD 0.0707 100 : USD 0.0576 300 : USD 0.051 3000 : USD 0.0451 6000 : USD 0.0413 9000 : USD 0.0393

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