X-On Electronics has gained recognition as a prominent supplier of UT2301G-AE3-R MOSFETs across the USA, India, Europe, Australia, and various other global locations. UT2301G-AE3-R MOSFETs are a product manufactured by Unisonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

UT2301G-AE3-R Unisonic

Name: UT2301G-AE3-R
Brand: Unisonic
SKU: UT2301GAE3R_Unisonic
Availability: InStock
Rating: 5 (11 reviews)

UT2301G-AE3-R electronic component of Unisonic

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See Product Specifications

Part No.	UT2301G-AE3-R
Manufacturer:	Unisonic
Category:	MOSFETs
Description:	MOSFET P Trench 20V 2.8A 450mV @ 250uA 130 mÎ© @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
Datasheet:	UT2301G-AE3-R Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0978 ea
Line Total: USD 0.98

Availability - 67
Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ: 10 Multiples: 10
Pack Size: 10

UT2301G-AE3-R More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

67

Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ : 10
Multiples : 10

10 : USD 0.0978
100 : USD 0.0777
300 : USD 0.0581
3000 : USD 0.0455
6000 : USD 0.0409
9000 : USD 0.0386

Specifications

Manufacturer

Unisonic Unisonic

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category

Unisonic Unisonic

Fet Type

p trench p trench

Drain To Source Voltagevdss

20 V 20 V

Continuous Drain Current Id @ 25°C

2.8 A 2.8 A

Vgsth Max @ Id

450mv @ 250ua 450mv @ 250ua

Rds On Max @ Id Vgs

130 m @ 2.8a,4.5v 130 m @ 2.8a,4.5v

Power Dissipation-Max Ta

1.14 W 1.14 W

Drain Source Voltage Vdss

20 V 20 V

Continuous Drain Current Id

2.8 A 2.8 A

Drain Source On Resistance Rdson@Vgs Id

130 mOhms @4.5V , 2.8A 130 mOhms @4.5V , 2.8A

Power Dissipation Pd

1.14 W 1.14 W

Gate Threshold Voltage Vgsth@Id

450 mV @250uA 450 mV @250uA

Type

P Channel P Channel

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We are delighted to provide the UT2301G-AE3-R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UT2301G-AE3-R and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The UT2301G-AE3-R is a single N-Channel Enhancement Mode MOSFET manufactured by Unisonic. It is packaged in a SOT-23-3 (small outline transistor) form factor and is compliant with RoHS regulations. This device features a P-Trench because the N-Channel is in the form of a shallow trench. Its rated voltage is 20V and its rated current is 2.8A. This device has an operating voltage of 450mV @ 250uA and a gate threshold voltage of 4.5V. Additionally, its RDS(on) is 130mÎ© @ 2.8A.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic Tech may also be referenced as

UTC(Unisonic Tech)

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Availability	Price	Buy Price	Quantity
67 Ship by Tue. 18 Mar to Fri. 21 Mar MOQ : 10 Multiples : 10	10 : USD 0.0978 100 : USD 0.0777 300 : USD 0.0581 3000 : USD 0.0455 6000 : USD 0.0409 9000 : USD 0.0386

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