X-On Electronics has gained recognition as a prominent supplier of LP4101LT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. LP4101LT1G MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

LP4101LT1G VBsemi Elec

LP4101LT1G electronic component of VBsemi Elec
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See Product Specifications
Part No.LP4101LT1G
Manufacturer: VBsemi Elec
Category: MOSFETs
Description: SOT-23 MOSFETs ROHS
Datasheet: LP4101LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0656 ea
Line Total: USD 0.66 
Availability - 2328
Ship by Thu. 09 Jan to Tue. 14 Jan
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
2328
Ship by Thu. 09 Jan to Tue. 14 Jan
MOQ : 10
Multiples : 10
10 : USD 0.0656
100 : USD 0.0539
300 : USD 0.0479
3000 : USD 0.0389
6000 : USD 0.0353
9000 : USD 0.0336

   
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We are delighted to provide the LP4101LT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LP4101LT1G and other electronic components in the MOSFETs category and beyond.

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CoThe LP4101LT1G SOT-23 MOSFET is a small signal N-channel FET from VBsemi Elec Co. This part is RoHS compliant. The onset voltage is low and the FET is suitable for power switchers, DC-DC converters, and other low to mid voltage power circuits. It has a maximum power dissipation of 20W and a drain-source breakdown voltage of 55V. The part is SOT-23 package and provides three terminals, gate, source and drain, and can be easily mounted to a PCB board. The leakage current at the drain-source voltage of 30V is less than 500nA. The gate-source capacitance at a drain-source voltage of 4.5V is 6pF. The threshold voltage is 1.5V and the gate-source voltage is +/- 10V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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