SI4800BDY-T1-E3 VBsemi Elec

SI4800BDY-T1-E3 electronic component of VBsemi Elec
SI4800BDY-T1-E3 VBsemi Elec
SI4800BDY-T1-E3 MOSFETs
SI4800BDY-T1-E3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI4800BDY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4800BDY-T1-E3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI4800BDY-T1-E3
Manufacturer: VBsemi Elec
Category: MOSFETs
Description: SO-8 MOSFETs ROHS
Datasheet: SI4800BDY-T1-E3 Datasheet (PDF)
Price (USD)
5: USD 0.3538 ea
Line Total: USD 1.77 
Availability : 0
  
QtyUnit Price
5$ 0.3538
50$ 0.3464
150$ 0.2306
500$ 0.2274

Availability 0
Ship by Thu. 30 Oct to Wed. 05 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.3538
50$ 0.3464
150$ 0.2306
500$ 0.2274

   
Manufacturer
Product Category
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We are delighted to provide the SI4800BDY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4800BDY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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The SI4800BDY-T1-E3 is a Surface Mount Technology (SMT) MOSFET, designed for power switch applications, and manufactured by VBsemi Elec. This small and versatile device is an enhancement mode MOSFET, and is made up of an N-channel Silicon Gate, which is encased in an SO-8 package. It is RoHS compliant and operates with a Drain-Source Voltage of 60V, making it ideal for power control applications. Furthermore, the SI4800BDY-T1-E3 has a Maximum Drain Current of 2.5 A, and Maximum Gate-Source Voltage of 15V, as well as a low 10nA Leakage Current.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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