The SI4800BDY-T1-E3 is a Surface Mount Technology (SMT) MOSFET, designed for power switch applications, and manufactured by VBsemi Elec. This small and versatile device is an enhancement mode MOSFET, and is made up of an N-channel Silicon Gate, which is encased in an SO-8 package. It is RoHS compliant and operates with a Drain-Source Voltage of 60V, making it ideal for power control applications. Furthermore, the SI4800BDY-T1-E3 has a Maximum Drain Current of 2.5 A, and Maximum Gate-Source Voltage of 15V, as well as a low 10nA Leakage Current.