X-On Electronics has gained recognition as a prominent supplier of SI9926CDY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI9926CDY-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI9926CDY-T1-GE3 VBsemi Elec

SI9926CDY-T1-GE3 electronic component of VBsemi Elec
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Part No.SI9926CDY-T1-GE3
Manufacturer: VBsemi Elec
Category: MOSFETs
Description: SO-8 MOSFETs ROHS
Datasheet: SI9926CDY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2327 ea
Line Total: USD 1.16 
Availability - 31
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5

 SI9926CDY-T1-GE3 More Buying Options & Price Grid(s)

Availability Price Quantity
31
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2327
50 : USD 0.2279
150 : USD 0.2247
500 : USD 0.2213

Specifications

   
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We are delighted to provide the SI9926CDY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI9926CDY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI9926CDY-T1-GE3 is a MOSFET manufactured by VBsemi Elec that is housed in a SO-8 package and is RoHS-compliant. The device is a split-gate N-channel enhancement mode MOSFET suitable for a wide range of low voltage and low current switching applications. It has a maximum drain-source voltage of 20V and a maximum drain current of 179mA. The drain-source on-resistance of the SI9926CDY-T1-GE3 is typically 270mOhm at room temperature. Features include low gate charge, internal charge pump design, and enhanced ESD protection.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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